Photonics Source provides 136 categories and 7939 products.
-
DS3-51512-LD Semiconductor Laser System
Output Power: 300W Center Wavelength: 976nm Wavelength Range: ±10nm Spectral Width (FWHM): 6nm Power Stability (25℃): ±3%(5hours) -
DPM-808C-300C-IS(3×4) Water-cooled Semiconductor Laser Module
Output Power (W): ≥300 Single Bar Power (W): ≥25 Center Wavelength (nm): 806~810(Typ.808) Spectral Width FWHM (nm): 3(Typ.);5(Max.) Emitting Height (mm): 45(Typ.) -
K980F14CC-10.00W 980nm 10W Fiber-Coupled Diode Laser Module
Model Number: K980F14CC-10.00W Test Conditions: 10W@25°C Output Power (W): ≥10 Center Wavelength (nm): 980±10 Wavelength Temperature Coefficient (nm/°C): 0.3 -
K980F11CA-10.00W 980nm 10W Fiber Coupled Diode Laser
Test Conditions: 10W@25℃ Output Power: ≥10W Center Wavelength: 980±10nm Wavelength Temperature Coefficient: 0.3nm/℃ Electro-optical Conversion Efficiency: 48% -
976nm 60W Wavelength-Locked Fiber-Coupled Diode Laser (K976AA5RN-60.00WN0N-10522F20EFF)
Output Power (Po): 60W(Min.) Center Wavelength (λc): 976±0.5nm Spectral Width (FWHM) (△λ): 0.5nm(Typ.)/0.7nm(Max.) Wavelength Temperature Coefficient (△λ/△T): 0.02nm/°C(Typ.) Wavelength Current Coefficient (△λ/△I): 0.03nm/A(Typ.) -
976nm 530W Wavelength-Locked Fiber Coupled Semiconductor Laser (K976BNERN-530.0WN0N-20022F20EFF)
Output Power: ≥530W Center Wavelength: 976±1nm Spectral Width (FWHM): Typ. 0.7nm; Max. 1.0nm Wavelength Temperature Coefficient: Typ. 0.02nm/°C Wavelength Current Coefficient: Typ. 0.03nm/A -
976nm 430W Wavelength-Locked Fiber-Coupled Diode Laser K976BNZRN-430.0WN0N-20022F20EFF (Standard)
Output Power: 430W(Min.) Center Wavelength: 976±1nm Spectral Width (FWHM): 0.7nm(Typ.), 1.0nm(Max.) Wavelength Temperature Coefficient: 0.02nm/°C(Typ.) Wavelength Current Coefficient: 0.03nm/A(Typ.) -
K976A02RN-3.000W 976nm 3W Fiber-Coupled Laser Diode Module
Model: K976A02RN-3.000W Test Temperature: 25°C Output Power (Po): ≥3W Center Wavelength (λc): 976±0.5nm Spectral Width FWHM (Δλ): 0.5nm(typ), 0.7nm(max) -
976nm 27W Wavelength-Locked Fiber-Coupled Diode Laser (K976AAHRN-27.00WN1N-10522F20EFF)
Output Power (Po): ≥27.0W Center Wavelength (λc): 976±0.5nm Spectral Width (FWHM) (Δλ): 0.5~0.7nm Temperature Coefficient (Δλ/ΔT): 0.02nm/°C Current Coefficient (Δλ/ΔI): 0.03nm/A -
976nm 260W Wavelength-Locked Fiber-Coupled Diode Laser K976BA0RN-260.0WN0N-13522F20EFF
Output Power (Po): ≥260W Center Wavelength (λc): 976±1nm Spectral Width (FWHM) (△λ): 0.7nm(Typ.), 1.0nm(Max.) Wavelength Temperature Coefficient (△λ/△T): 0.02nm/°C(Typ.) Wavelength Current Coefficient (△λ/△I): 0.03nm/A(Typ.) -
976nm 18W Wavelength-Locked Fiber Coupled Diode Laser (K976AAHRN-18.00WN1N-10522F20EFF, Standard)
Output Power (W): ≥18 Center Wavelength (nm): 976±0.5 Spectral width (FWHM) (nm): Typ.0.5, Max.0.7 Wavelength Temperature Coefficient (nm/℃): 0.02 Wavelength Current Coefficient (nm/A): 0.03 -
976nm 140W Wavelength-Locked Fiber-Coupled Diode Laser K976BN1RN-140.0WN0N-10522F20EFF
Output Power Po (W): 140 (Min.) Center Wavelength λc (nm): 976±1 Spectral Width (FWHM) △λ (nm): 0.6 (Typ.) / 1.0 (Max.) Wavelength Temperature Coefficient △λ/△T (nm/°C): 0.02 Wavelength Current Coefficient △λ/△I (nm/A): 0.03 -
940nm 10W 105μm 光纤耦合半导体激光器（K940E02HN-10.00W）
Output Power (W): ≥10 Center Wavelength (nm): 940±5 Spectral width (FWHM) (nm): 3 Wavelength Temperature Coefficient (nm/°C): 0.3 Electro-Optical Efficiency (%): 51 -
915nm 250W High Power Fiber-Coupled Semiconductor Laser K915-A0-250.0W-13522-D
Output Power: 250W(Min.) Center Wavelength: 915±10nm Spectral Width (FWHM): 4nm(Typ.), 6nm(Max.) Temperature Drift Coefficient: 0.3nm/°C(Typ.) Power Ratio within 0.17/0.22NA: 90%(Min.), 95%(Typ.) -
888nm 170W 高功率稳波长半导体激光器 K888BL9RN-170.0W
Output Power Po (W): 170(Min.) Center Wavelength λc (nm): 888±1 Spectral Width (FWHM) Δλ (nm): 0.5 Temperature Drift Coefficient Δλ/ΔT (nm/°C): 0.03 Brightness (95% Energy NA): 0.17 -
888nm 120W High Power Wavelength-Stabilized Semiconductor Laser K888BL9RN-120.0W
Output Power: 120W Center Wavelength: 888±1nm Spectral Width (FWHM): 0.5nm Wavelength Temperature Coefficient: 0.03nm/℃ Brightness (95% Energy NA): 0.17 -
878.6nm 90W High Power Wavelength-Stabilized Semiconductor Laser K878BA5RN-90.00W
Output Power (Po): ≥90W Center Wavelength (λc): 878.6±1nm Spectral Width FWHM (△λ): 0.5nm Wavelength Temperature Coefficient (△λ/△T): 0.03nm/°C Electro-Optical Conversion Efficiency (PE): 50% -
K878BL9RN-170.0W
Output Power: Min:170W Center Wavelength: 878.6±1nm Spectral Width (FWHM): Typ:0.5nm Wavelength Temperature Drift Coefficient: Typ:0.03nm/℃ Brightness (95% Energy NA): 0.17 -
K878BL9RN-120.0W 878.6nm 120W High-Power Wavelength-Stabilized Semiconductor Laser
Output Power (W): ≥120 Center Wavelength (nm): 878.6±1 Spectral width (FWHM) (nm): 0.5 Wavelength Temperature Coefficient (nm/℃): 0.03 Brightness (95% Energy NA): 0.17 -
K878BNLRN-65.00W 878.6nm 65W High Power Wavelength-Stabilized Semiconductor Laser
Model: K878BNLRN-65.00W Test Conditions: 65W@25°C Output Power (Minimum): 65W Center Wavelength (Typical): 878.6±1nm Spectral Width FWHM (Typical): 0.5nm