Current Category:
Brand:
Photonics Source provides 74 products. Download datasheets, request quotes, and compare function, price, and availability.
-
Fully Automatic Optoelectronic Device Die Bonding and Assembly System
Equipment Type: Fully automatic die bonding and assembly system Configuration: Dual-station enclosed chamber with front double doors Observation Window: Large transparent safety windows on processing chamber Operator Interface: Dual touchscreen HMI panels Status Indicator: Multi-color tower light (red/yellow/green) -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ωcm to >10kΩcm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ωcm to >10kΩcm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity: <0.001 Ohm-cm to >10 kOhm-cm Crystal Material: MCZ, A-MCZ Device Layer Thickness: 1.0μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ω·cm to >10kΩ·cm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ω·cm to >10kΩ·cm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ohm-cm to >10kOhm-cm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
Unknown
Housing Material: Stainless Steel Power Requirements: 220V/50Hz Power: 1500W Dimensions: 600x600x1200mm Weight: 80kg -
TruConvert
Compatible Slave Modules: TruConvert AC 3025 / TruConvert DC 1008 Number of Connectable Slave Modules: 1-16 Slave Module Addressing: Individual / Broadcast User Interface: Ethernet (Modbus TCP / UDP, Web Server), 2 x RJ-45 (switched) System Interface (Module Connection, Backplane): RS-485 (RJ-45) -
TruConvert
Compatible Slave Modules: TruConvert AC 3025 / TruConvert DC 1008 Number of Connectable Slave Modules: 1–16 Slave Module Addressing: Individual / Broadcast User Interface: Ethernet (Modbus TCP / UDP, Web Server), 2 x RJ-45 (switched) System Interface: RS-485 (RJ-45) -
NLD-5700
Chamber Size: Standard Plasma Source: Inductively Coupled Plasma (ICP) Gas Flow Control Range: Wide range Vacuum Level: High vacuum Processing Capability: High throughput -
SOPHI
Inspection Speed: High Resolution: High Dimensions: Compact Power Supply: Standard AC Interface: User-friendly touchscreen -
Unknown
Material: Copper and aluminum Diameter: Varies by model Surface Roughness: ≤0.5nm Flatness: ≤λ/10 -
SOPHI
Dimensions: Customizable Power Requirements: AC200V, 50/60Hz Operating Temperature: 15-30°C Humidity Range: 20-80% (non-condensing) Control System: Touchscreen Interface -
e5
Chamber Size: 500mm x 500mm Vacuum Level: ≤10^-6 Pa Power Supply: AC200V, 50/60Hz Control System: Touchscreen interface Deposition Rate: Up to 10nm/min -
EC-200
Operating Temperature Range: 10°C-40°C Vacuum Level: ≤10⁻⁶ Torr Film Thickness Uniformity: ≤±2% Substrate Size: 200mm Power Consumption: ≤10kW -
SOPHI
Dimensions: Customizable Power Requirements: AC200V, 3-phase, 50/60Hz Polishing Accuracy: Sub-nanometer level Processing Capacity: High throughput Control System: Automated with touch screen interface
