Photonics Source provides 136 categories and 7939 products.
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SRII Ion Implanter Series
Dimensions SRII-60: 6.48×2.76×3.06m Dimensions SRII-200: 6×3×3.06m Dimensions SRII-1.5M: 9.2×4.2×3m Dimensions SRII-4.5M: 8.9×4.2×2.86m Dimensions SRII-8M: 9.7×4.4×2.86m -
SRII MCI Ion Implanter
Dimensions: 7.52×3.19×3.08m Wafer Size: 200mm/300mm Species: B/P/As (expandable) Application: Logic/Memory/Power/CIS etc. Energy Range: 2-900keV -
P Series
Process Type: Thermal ALD Process Temperature Range: 25-550°C Substrate Type: Silicon wafers, glass, metal materials, polymer 3D objects Vacuum Chamber Size: ø400mm (P400A), ø800mm (P800), ø1700mm (P1500) Reaction Chamber Loading and Size: 240×240×720mm with 23 shelf cassette, 370×470×25mm with 2 shelf cassette (P400A); 550×310×700mm, 380×380×900mm, 730×1200×10mm (P800); 1300×2400×750mm (P1500) -
P Series ALD Platform
Process Type: Thermal ALD Process Temperature Range: 25-550°C Substrate Type: Silicon wafers, glass, metal materials, polymer 3D substrates Vacuum Chamber Size: ø400mm (P400A), ø800mm (P800), ø1700mm (P1500) Reaction Chamber Loading and Size: 240×240×720mm (P400A), 550×310×700mm (P800), 1300×2400×750mm (P1500) -
P Series ALD Platform
Process Type: Thermal ALD Process Temperature Range: 25-550°C Substrate Type: Silicon wafers, glass, metal materials, polymer 3D objects Vacuum Chamber Size: ø400mm (P400A), ø800mm (P800), ø1700mm (P1500) Reaction Chamber Loading and Size: 240×240×720mm with 23 shelf cassette, 370×470×25mm with 2 shelf cassette (P400A); 550×310×700mm, 380×380×900mm, 730×1200×10mm (P800); 1300×2400×750mm (P1500) -
Genesis ALD
Process Type: Spatial Thermal ALD Substrate Type: Polymer Substrate Type: steel Substrate Type: glass Substrate Type: stainless steel -
P Series ALD Platform
Process Type: Thermal ALD Process Temperature Range: 25-550°C Substrate Type: Silicon wafers, glass, metal materials, polymer and 3D substrates Vacuum Chamber Size: Φ400mm (P400A), Φ800mm (P800), Φ1700mm (P1500) Reaction Chamber Loading and Size: 240×240×720mm with 23 shelf cassette (P400A), 550×310×700mm (P800), 1300×2400×750mm (P1500) -
P Series ALD Platform
Process Type: Thermal ALD Process Temperature Range: 25-550°C Substrate Type: Silicon wafers, glass, metal materials, polymer 3D substrates Vacuum Chamber Size P400A: ø400mm Vacuum Chamber Size P800: ø800mm -
EB-FCP-200-200-0792-03
Center Wavelength: 789-795 Wavelength Tolerance: ±3 Output Power: 200 Spectral Width (FWHM): 3-3.5 NA@95% Powerin: 0.16-0.17 -
EB-MCP-V#-100-####-0808-10
Center Wavelength: 808nm Wavelength Tolerance: ±10nm Output Power: 100W Number of Bars: 2-60 Spectral Width (FWHM): 8nm -
EB-FCP-1200-300-0976-03
Center Wavelength: 976nm Wavelength Tolerance: ±3nm Output Power: 1200W Spectral Width (FWHM): 5nm Numerical aperture: 0.17 -
EB-FCP-300-135-0940-05
Center Wavelength: 976nm Wavelength Tolerance: ±3nm Output Power: 300W Spectral Width (FWHM): 5nm Numerical aperture: 0.175 -
EB-FCP-300-135-0915-10
Center Wavelength: 915nm Wavelength Tolerance: ±10nm Output Power: 300W Spectral Width (FWHM): 6nm Numerical aperture: 0.175 -
EB-FCP-175-200-0888-0.5-V
Center Wavelength@lop: 888nm Wavelength Tolerance: ±0.5nm Output Power: 175W Spectral Width (FWHM): 0.3nm Numerical aperture: 0.22 -
EB-FCP-175-200-878.6-0.5-V
Center Wavelength@lop: 878.6nm Wavelength Tolerance: ±0.5nm Output Power: 175W Spectral Width (FWHM): 0.3nm Numerical aperture: 0.22 -
EB-FCP-050-400-0808-03
Center Wavelength@lop: 808nm Wavelength Tolerance: ±3nm Output Power: 50W Spectral Width (FWHM): 1.5nm Numerical aperture: 0.22 -
EB-4ch VCSEL-5.25-850-25-01
Average Operating Current: 7.5mA Threshold Current: 0.2-1.5mA Output Power: 2-4.7mW Slope Efficiency: 0.45W/A Forward Voltage: 2-2.5V -
EB-OL-VS-SS-4x20_50A/6x30_80A 8.5x40_120A/11x50_150A
Center Wavelength: 976±20 Max. Input Laser Power: 3000 Input Fiber Core Requirement: 600 N.A. Requirement: 0.22 Adapted Fiber Connector: QBH -
EB-DDLM-0200A-I1R03
Center Wavelength: 450nm Central Wavelength Offset: ±20nm Max Output Power: 200W Output Power Instability: ≤±3% Full Power Power Tunability: 10-100% -
EB-DDLM-150A
Center Wavelength: 915/976nm Central Wavelength Offset: ±20nm Max Output Power: 150W Output Power Instability: ≤±1.5%满功率(Full Power) Power Tunability: 10-100%