Photonics Source provides 136 categories and 7939 products.
-
DLC smart
Dimensions: 482.6mm x 282.5mm x 43.6mm Weight: 约3kg Power Input: 100-240VAC, 50/60Hz Control Interface: USB, Ethernet, RS232 Laser Current Control Range: 0-200mA -
FPI
Thread Diameter: M4 Thread Depth: 6mm Dimensions: 113.9mm x 40mm x 40mm Input Beam: Defined aperture Electronic Interface Module: Integrated -
TeraScan ultra
Difference frequency tuning (laser): 0-10THz Difference frequency tuning (THz emission): 20GHz-5THz Tuning speed: Up to 0.1THz/s Frequency Accuracy: Up to 1Hz, depending on clock reference Frequency resolution and step size: Up to 1Hz -
TeraFlash smart
Laser Wavelength: 1560nm Laser Pulse Width: typ.80fs Laser Repetition Rate: 80MHz External Fiber Length: 10.8m Terahertz Emitter: PCA-TD-030-TX-1: InGaAs/InP photoconductive switch with 25μm strip-line antenna, 0.3m fiber pigtail -
TeraFlash pro
Spectral Range: 0.1–6THz (typ. 6.5THz) Spectral Peak Dynamic Range: 100dB Usable Terahertz Path Length: 15–110cm, continuously adjustable via software Laser Wavelength: 1560nm Laser Pulse Width: typ. 50–80fs -
T-Sweeper x8
Laser Type: Erbium-doped fiber laser Bandwidth: 4THz Dynamic Range: 117dB Measurement Rate: 200Hz Layer Thickness Measurement Range: 5-23μm -
WS8-2 Wavelength Meter
Available Measurement Range: 330–1180nm Absolute Accuracy (330–375nm): 10MHz Absolute Accuracy (375–1180nm): 2MHz Quick Coupling Accuracy (50μm Multi Mode Fiber): 100MHz Wavelength Deviation Sensitivity/Measurement Resolution: 0.1MHz -
WR8-2 Wavelength Meter
Available Measurement Range: 330–1180nm Absolute Accuracy 330–375nm: 10MHz Absolute Accuracy 375–1180nm: 2MHz Quick Coupling Accuracy: 100MHz Wavelength Deviation Sensitivity/Measurement Resolution: 0.1MHz -
TA-SHG pro
Wavelength Range: 330-780nm Output Power: Up to 2500mW Coarse Tuning Range: Up to 30nm Continuous Scan Range: >20GHz (up to 50GHz possible) Typical Linewidth: 20-120kHz -
TA-SHG pro & TA-FHG pro
Wavelength Range DLC TA-SHG pro: 330..780nm Wavelength Range DLC FA-SHG pro: 330..780nm Wavelength Range DLC TA-FHG pro: 205..390nm Wavelength Range DLC FA-FHG pro: 244..390nm Output Power DLC TA-SHG pro: Up to 2500mW -
DFC PURACY
Wavelength Range (nm): 2000, 1550, 1162, 1000, 778, 689, 532, 420 Optical Linewidth (kHz): 0.3, 0.6, 1.3, 2, 5, 7, 9, 13 Averaging Time (s): 100, 1000, 10000 Fractional Frequency Stability: 3e-15, 5e-16, 2e-16 Offset Frequency (Hz): 1, 10, 100, 1000, 10000 -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ω·cm to >10kΩ·cm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ω·cm to >10kΩ·cm Device Layer Thickness: 1.0μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
TITAN™ Probe Series
Characteristic Impedance: 50Ω Frequency Range: DC to 220GHz Insertion Loss (dB): <5 Return Loss (dB): ≥9 Tip End Return Loss (dB): ≥13 -
TITAN™ Probe Family DC to 145 GHz
Characteristic Impedance: 50Ω Connector Type: 0.8mm, female Tip Material: Ni alloy Contact Footprint Width: 15μm Maximal Voltage: ≤50V -
TS3500-SE
Chuck XY Stage Travel Range: 310mm×530mm Resolution: 0.0001° (0.24μm @ 300mm edge) Accuracy: <2.0μm Repeatability: <1.0μm XY Stage Drive: Closed-loop high precision stepper motors -
MPI TS200-HP
Probe Station Dimensions: 900×1050×1930mm Weight: ~500kg Chuck XY Stage Travel Range: 225×260mm Fine Travel Range: 25×25mm Fine Travel Resolution: <1.0μm@500μm/rev -
Unknown
Number of Wires: Multiple Connection Type: High-density Operating Temperature: -40°C to +85°C Insertion Loss: Low Fiber Type: Single-mode/multi-mode -
TS150 Manual Probe System
Total Travel Range: 180x230mm (7.1x9.1in) Fine Travel Range: 25x25mm fine micrometer control Fine Travel Resolution: <1.0μm (0.04mils)@500μm/rev Planarity: <10μm Theta Travel (Standard): 360° -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ωcm to >10kΩcm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm