Laser Wafer Modification Cutting System
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Overview
Specifications
| Parameter | Value |
|---|---|
| 4inch, 6inch, 8inch, 12inch (optional) | |
| Maximum 1000mm/s | |
| wafer Frame | |
| <10W | |
| 10~200KHz | |
| Repeatable positioning accuracy: ±1μm, X-axis straightness: ±1μm/300mm | |
| 430mm×550mm×30mm | |
| ±1μm | |
| Rotation angle: 210° Rotation resolution: 15arc-sec | |
| ≤±5um(200mm range) | |
| Angle, level, reference point correction, CCD light source brightness automatic adjustment | |
| 22℃ | |
| 30~60% | |
| Thousand level or above | |
| 0.5-0.8Mpa | |
| Single phase 220V, 50Hz, more than 20A | |
| <5% | |
| 1500(W)mm×2100(L)mm×2180(H)mm |
Key Features
Datasheet
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Supplier Information
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