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Photonics Source provides 12 products. Download datasheets, request quotes, and compare function, price, and availability.
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Fully Automatic Optoelectronic Device Die Bonding and Assembly System
Equipment Type: Fully automatic die bonding and assembly system Configuration: Dual-station enclosed chamber with front double doors Observation Window: Large transparent safety windows on processing chamber Operator Interface: Dual touchscreen HMI panels Status Indicator: Multi-color tower light (red/yellow/green) -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ωcm to >10kΩcm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ωcm to >10kΩcm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity: <0.001 Ohm-cm to >10 kOhm-cm Crystal Material: MCZ, A-MCZ Device Layer Thickness: 1.0μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ω·cm to >10kΩ·cm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ω·cm to >10kΩ·cm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ohm-cm to >10kOhm-cm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
Unknown
Housing Material: Stainless Steel Power Requirements: 220V/50Hz Power: 1500W Dimensions: 600x600x1200mm Weight: 80kg -
OSTINATO (34 Slots all-in-one-system)
Model: OSTINATO (34 Slots all-in-one-system) Water Size: 6&8 inch Dimension: 3400(W)×2600(D)×2600(H) Test Item: HITGB Burn-in, IGSS, IDSS, VTH Measurement DUT: 2,048 DUT/Slot (Option: 4,096 DUT) -
ETS-88 Duo
Test Turn Table with Heater: Integrated Hot Temp Test: Available Room Temp Test: Available Input Wafer Vision: V1, V2 Output Wafer Vision: V11 -
Fiber Laser IPG 20W MOPA
Laser Type: Fiber Laser IPG 20W MOPA Laser Wavelength: 1064nm Maximum Energy: 1mJ/Pulse Maximum Power: 20W Output Power Range: 10-100% -
Elite Etch System
Etching Machine Composition: Height:300mm(13in),Width:190mm(7.5in),Depth:305mm(12in) Bottle Assembly: Height:254mm(10in),Width:280mm(11in),Depth:127mm(5in) Weight: 16kg(35lb) Power: 90-250VAC,50/60Hz(4amp) Openable Copper Wire Encapsulation: Up to 0.8mil copper wire