TruPlasma RF Series 1000/3000

TruPlasma RF Series 1000/3000

Supplier
Trumpf
Part Number
TruPlasma RF Series 1000/3000
Category
Semiconductor Manufacturing Equipment
Origin
Germany

The TruPlasma RF Series 1000/3000 provides high-frequency generators designed for plasma applications, offering stable output power, high control accuracy, and exceptional energy efficiency.

Specification Snapshot
Dimensions (W x H x D)
216x128.5x405mm (3HU)
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Overview

The TruPlasma RF Series 1000/3000 provides high-frequency generators designed for plasma applications, offering stable output power, high control accuracy, and exceptional energy efficiency.

Specifications

ParameterValue
Output Power Range TruPlasma RF 1001 (G2/13)1W...1000W
Output Power Range TruPlasma RF 1002 (G2/13)1W...2000W
Output Power Range TruPlasma RF 1003 (G2/13)1W...3000W
Maximum Reflected Power600W
Output Frequency13.56MHz ±0.005%
Output Impedance50Ω
Harmonic Signals at Full Nominal Output Power-40dBc
Spurious Signals at Full Nominal Output Power-50dBc
Power Accuracy at 50Ω Load±1W or ±1%
Fluctuation at 50Ω Load±1W
Reproducibility of Output Power at 50Ω Load±2W or ±1%
Regulation ModeForward power
Regulation Modeload power
Regulation Modeexternal voltage
Pulse Mode1Hz to 50kHz, internal and external signal source
Frequency Agility±678kHz (±5%) optional
InterfacesAnalog: DeviceNet, RS232/485, SystemPort or EtherCAT, Profibus
Sync (CEX; pulse; arc)Yes
Mains Voltage200-480VAC ±10%, 3 phases + PE
Overall Efficiency at Full Nominal Power72%-80% (typ.)
Power Factor (cosφ)0.95
Mains Power Consumption at Full Nominal Power1.8kVA-4.3kVA
Ambient Temperature5°C...35°C
Cooling MediumWater
Min. Throughput at 13.56MHz Operation4l/min
Max. Water Pressure7bar
Max. Differential Pressure1.1bar
Protection Class30
Dimensions (W x H x D)216x128.5x405mm (3HU)
Weight18kg
Standards and DirectivesSEMI F47, SEMI S2, UL, CSA, CE, RoHS

Applications

1. Semiconductor manufacturing 2. Microchip production 3. Solar cell production 4. Flat-panel display production 5. Plasma etching 6. Ion beam source 7. Photoresist plasma incineration 8. Reactive ion etching 9. Atomic layer deposition (ALD) 10. Plasma-enhanced chemical vapor deposition (PECVD) 11. RF sputtering 12. Hard-material and wear-protection layers

Key Features

1. Stable and reproducible processes 2. No restrictions on cable length 3. Robust system construction 4. Excellent efficiency 5. Global installation compatibility 6. Advanced cooling concept 7. Individual process adaptations 8. System integration

Datasheet

Product Datasheet
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Supplier Information

Tr
Trumpf
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<p>Our task is to further develop and digitally network production technology to make it more economical, precise and future-proof. To do this, we want to plan production and its upstream and downstream workflows more efficiently. This is how we strive to shape the industrial world of the future. As a market and technology leader in machine tools and lasers in the industrial production field, our innovations have impacted almost all walks of life. Our software solutions pave the way for smart factories and enable high-tech processes in industrial electronics.</p>

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