SiC Boule and Special Sizes
SiC Third-Generation Wide-Bandgap Group IV-IV1:1 C/Si Compound,Hardness Second to Diamond,High Thermal Conductivity/Breakdown Field.
Specification Snapshot
Silicon Carbide Boules and Special Dimensions - Type
Crystal Ingots and Rods
Silicon Carbide Boules and Special Dimensions - Type
Wafer
Silicon Carbide Boules and Special Dimensions - Type
Special-Shape Specifications
Silicon Carbide Boules and Special Dimensions - Dimension Example 1 [Type: Ingot and Crystal Rod]
4-Inch*T10mm Crystal Rod
Silicon Carbide Boules and Special Dimensions - Dimension Example 1 [Type: Wafer]
2-Inch*T3.0mm Thick Wafer
Silicon Carbide Boules and Special Dimensions - Dimension Example 1 [Type: Special-Shaped Specification]
Silicon Carbide Rings and Blocks
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Overview
SiC Third-Generation Wide-Bandgap Group IV-IV1:1 C/Si Compound,Hardness Second to Diamond,High Thermal Conductivity/Breakdown Field.
Specifications
| Parameter | Value |
|---|---|
| Silicon Carbide Boules and Special Dimensions - Type | Crystal Ingots and Rods |
| Silicon Carbide Boules and Special Dimensions - Type | Wafer |
| Silicon Carbide Boules and Special Dimensions - Type | Special-Shape Specifications |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 1 [Type: Ingot and Crystal Rod] | 4-Inch*T10mm Crystal Rod |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 1 [Type: Wafer] | 2-Inch*T3.0mm Thick Wafer |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 1 [Type: Special-Shaped Specification] | Silicon Carbide Rings and Blocks |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 2 [Type: Ingot and Crystal Rod] | 6-Inch*T20mm Crystal Rod |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 2 [Type: Wafer] | 2-Inch*T0.1mm Ultrathin |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 2 [Type: Special-Shaped Specification] | Silicon Carbide Optical Eyeglass Lenses |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 3 [Type: Ingot and Crystal Rod] | 8-Inch*T20mm Crystal Rod |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 3 [Type: Wafer] | 3-Inch*T5.0mm Thick Wafer |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 3 [Type: Special-Shaped Specification] | Silicon Carbide Drilling |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 4 [Type: Ingot and Crystal Rod] | 2~8-Inch Crystal Ingots |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 4 [Type: Wafer] | 6-Inch*T1.0mm Thick Wafer |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 4 [Type: Special-Shaped Specification] | Silicon Carbide Laser Cutting |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 5 [Type: Ingot and Crystal Rod] | Crystal Rod Polishing |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 5 [Type: Wafer] | Diameter 159*T0.725mm Carrier Wafer |
| Silicon Carbide Boules and Special Dimensions - Dimension Example 5 [Type: Special-Shaped Specification] | Silicon Carbide Engraving |
| Silicon Carbide Boules and Special Dimensions - Surface Condition [Type: Ingot and Crystal Rod] | Cutting |
| Silicon Carbide Boules and Special Dimensions - Surface Condition [Type: Wafer] | Ground |
| Silicon Carbide Boules and Special Dimensions - Surface Condition [Type: Special-Shaped Specification] | Polished |
| Silicon Carbide Single Crystal - Crystal Structure | Hexagonal Crystal |
| Silicon Carbide Single Crystal - Bandgap | 3.26eV |
| Silicon Carbide Single Crystal - Melting Point | 2730℃ |
| Silicon Carbide Single Crystal - Mohs Hardness | 9.2 mohs |
| Silicon Carbide Single Crystal - Thermal Conductivity | 4.9W·cm⁻¹·℃⁻¹ |
| Silicon Carbide Single Crystal - Thermal Expansion Coefficient | 4.7×10⁻⁶ |
| Silicon Carbide Single Crystal - Lattice Constant | a=0.3076 c=0.5048 |
| Silicon Carbide Single Crystal - Electron Mobility | 720ᵃ650ᶜ |
| Silicon Carbide Single Crystal - Breakdown Electric Field | 3.1 MV·cm⁻¹ |
| Silicon Carbide Single Crystal - JFM Index (Power) | 410 |
| Silicon Carbide Single Crystal - BFM Index (SW) | 290 |
| Silicon Carbide Single Crystal - BHFM Index (RF) | 34 |
| Silicon Carbide Single Crystal - Refractive Index | 2.6767~2.6480 |
Applications
Laser Lift-Off Test Materials, Semiconductor Chip Material Analysis/Testing, High-End Optics
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Supplier Information
Jiangyin Jingmu Optoelectronic New Materials Co., Ltd. is a technology-oriented enterprise dedicated to semiconductor wafer material processing and epitaxial technology. With a decade of focus on semiconductor substrates, including SiC, sapphire, silicon, and third/fourth-generation materials like diamond, GaN, Ga2O3, AlN, it also provides optical wafers and carrier products. Equipped with advanced processing technologies such as cutting, grinding, polishing, laser processing, epitaxial coating, and wafer bonding, it collaborates with universities for R&D, offering customized solutions. Products are widely used in LED, power devices, RF, and optical communication.
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