Silicon-Based GaN Epitaxial Template
GaN-on-Si Epitaxy Grows GaN Films on Silicon,Combining GaN Performance with Low-Cost Silicon.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter | 50.8mm |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter | 100mm |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter | 150mm |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter | 200mm |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Silicon Substrate Thickness [Substrate diameter: 50.8mm] | 1000μm |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Silicon Substrate Thickness [Substrate diameter: 100mm] | 1000μm |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Silicon Substrate Thickness [Substrate diameter: 150mm] | 1000μm |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Silicon Substrate Thickness [Substrate diameter: 200mm] | 1150μm |
| Silicon-Based GaN Epitaxial Substrate Tempalte (2~8 Inches) - Silicon Substrate Surface | Polished/Etched |
| Silicon-Based GaN Epitaxial Substrate Tempalte (2~8 Inches) - Silicon Substrate Crystal Orientation | P(111) |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial Conductivity Type [Substrate diameter: 50.8mm] | N-type |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial Conductivity Type [Substrate diameter: 100mm] | P-type |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial Conductivity Type [Substrate diameter: 150mm] | UID |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial Dopant Element [Epitaxial Conductivity Type: N-Type; Substrate Diameter: 50.8mm] | Si-doping |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial Dopant Element [Epitaxial Conductivity Type: P-Type; Substrate Diameter: 100mm] | Mg-doping |
| Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial Dopant Element [Epitaxial Conductivity Type: UID; Substrate Diameter: 150mm] | Undoped |
| Silicon-Based GaN Epitaxial Substrate Tempalte (2~8 Inches) - Epitaxial Layer Thickness | ＜5 um |
| Silicon-Based GaN Epitaxial Substrate Tempalte (2~8 Inches) - Epitaxial Layer Thickness Uniformity | ≤5% |
| Silicon-Based GaN Epitaxial Substrate Tempalte (2~8 Inches) - Epitaxial Layer Surface | RMS＜2nm |
Applications
Datasheet
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