Sapphire-Based GaN Epitaxial Template
GaN-on-Sapphire Epitaxial Template Grows GaN Film on Al₂O₃,Common Substrate for Heat/Chemical Stability/Cost Advantages.
Save to Favorites
Overview
Specifications
| Parameter | Value |
|---|---|
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter | 50.8mm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter | 100mm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter | 150mm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter | 200mm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Sapphire Substrate Thickness [Substrate diameter: 50.8mm] | 430μm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Sapphire Substrate Thickness [Substrate diameter: 100mm] | 650μm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Sapphire Substrate Thickness [Substrate diameter: 150mm] | 1000μm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Sapphire Substrate Thickness [Substrate diameter: 200mm] | 1600μm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Sapphire Substrate Surface [Substrate diameter: 50.8mm] | FSS/PSS/NPSS |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Sapphire Substrate Surface [Substrate diameter: 100mm] | FSS/PSS/NPSS |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Sapphire Substrate Surface [Substrate diameter: 150mm] | FSS/PSS/NPSS |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Sapphire Substrate Surface [Substrate diameter: 200mm] | FSS/PSS/NPSS |
| Sapphire-Based GaN Epitaxial Substrate Tempalte (2~8 Inches) - Sapphire Substrate Crystal Orientation | C-Plane |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial Conductivity Type [Substrate diameter: 50.8mm] | N-type |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial Conductivity Type [Substrate diameter: 100mm] | P-type |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial Conductivity Type [Substrate diameter: 150mm] | UID |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial Dopant Element [Epitaxial Conductivity Type: N-Type; Substrate Diameter: 50.8mm] | Si-doping |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial Dopant Element [Epitaxial Conductivity Type: P-Type; Substrate Diameter: 100mm] | Mg-doping |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial Dopant Element [Epitaxial Conductivity Type: UID; Substrate Diameter: 150mm] | Undoped |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial-Layer Thickness [Epitaxial Conductivity Type: N-Type; Substrate Diameter: 50.8mm] | Thick Film: 3~5μm; Thin Film: 0.1~1μm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial-Layer Thickness [Epitaxial Conductivity Type: P-Type; Substrate Diameter: 100mm] | Thick Film: 3~5μm; Thin Film: 0.1~1μm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial-Layer Thickness [Epitaxial Conductivity Type: UID; Substrate Diameter: 150mm] | Thick Film: 3~5μm; Thin Film: 0.1~1μm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial-Layer Thickness Uniformity [Epitaxial Conductivity Type: N-Type; Substrate Diameter: 50.8mm] | ≤5% |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial-Layer Thickness Uniformity [Epitaxial Conductivity Type: P-Type; Substrate Diameter: 100mm] | ≤5% |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial-Layer Thickness Uniformity [Epitaxial Conductivity Type: UID; Substrate Diameter: 150mm] | ≤5% |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial-Layer Surface Condition [Epitaxial Conductivity Type: N-Type; Substrate Diameter: 50.8mm] | RMS＜2nm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial-Layer Surface Condition [Epitaxial Conductivity Type: P-Type; Substrate Diameter: 100mm] | RMS＜2nm |
| Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Epitaxial-Layer Surface Condition [Epitaxial Conductivity Type: UID; Substrate Diameter: 150mm] | RMS＜2nm |
Applications
Datasheet
Please provide your email to download the datasheet.
Invalid email format. Please try again.
Supplier Information
Related Products
-
Sapphire A-R-M Special Crystal-Orientation Substrate
Optical Material
Jmwafer
A-M-R Orientation Single-Crystal Sapphire Substrate (2~6 Inches) - Material Composition: >99.99%，High Purity， Mono-crystalline Al2O3 (KY) Sapphire A/M/R-Plane Single-Crystal Substrate (2~6 Inches) - End-Face Crystal Orientation [Diameter: 50.8mm]: A-plane (11-20) ± 0.1° Sapphire A/M/R-Plane Single-Crystal Substrate (2~6 Inches) - End-Face Crystal Orientation [Diameter: 100mm]: A-plane (11-20) ± 0.1°
α-Al2O3 Hexagonal Lattice,Chemically Stable/Water-Insoluble/Strong Acid-Alkali Resistant,Mohs9,Melts2050℃/Boils3500℃,Operating up to1900℃,Good Transmission/Thermal Conduction/Insulation/Mechanics,Wear/Scratch Resistance.
-
N-Type Silicon Carbide Epitaxy
Optical Material
Jmwafer
N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter: 2 inch - 50.8mm N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter: 4 inch - 100mm N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter: 6 inch - 150mm
N-Type SiC Epitaxy Grows N-Doped Layer on SiC,High Electron Mobility/Thermal Conductivity/Breakdown Field.
-
Silicon-Based GaN Epitaxial Template
Optical Material
Jmwafer
Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter: 50.8mm Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter: 100mm Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter: 150mm
GaN-on-Si Epitaxy Grows GaN Films on Silicon,Combining GaN Performance with Low-Cost Silicon.
-
High-Borosilicate Glass BF33
Optical Material
Jmwafer
High-Borosilicate Glass - Material: BF33 High-Borosilicate Glass - Diameter: 50.8mm High-Borosilicate Glass - Diameter: 100mm
BF33 Special Borosilicate Glass with Low Expansion,Heat Resistance,Chemical Stability and Excellent Transmission.
Related Articles
Founded in 2019, Jilin JC Ultrafast Equipment Co., Ltd. is a high-tech enterprise incubated by the Ultrafast Optoelectronics Center of Jilin University. Our R&D team owns 15 years of profound experience in femtosecond laser micro-nano fabrication.
VCSEL, short for Vertical Cavity Surface Emitting Laser, is a widely used semiconductor laser component in modern optoelectronics. Unlike traditional edge-emitting lasers, VCSEL emits laser light vertically from its chip surface. Thanks to its low power consumption, stable beam quality, low cost, and easy integration, it has become the core light source for 3D sensing, wearable devices, and high-speed optical communication.
Driven by the rapid upgrading of intelligent vehicles, optoelectronic sensing technologies represented by laser sensing and infrared thermal imaging have become core pillars for high-level autonomous driving and smart cockpit iteration. Leveraging automotive-grade optoelectronic R&D advantages, Pilot Technology Group launches the VITAL intelligent vehicle solution. By integrating high-power VCSEL laser chips and vehicle infrared night-vision thermal imagers, the system comprehensively enhances vehicle environmental perception and realizes safer, smarter and more comfortable driving experiences.
The MSL‑T series water‑cooled continuous‑wave single‑longitudinal‑mode lasers from Changchun New Industries Optoelectronics (CNI) deliver key research wavelengths including 369 nm, 405 nm and 770 nm.
Loading...
Name
Phone
Organization
Use Case
Database Platform