N-Type Silicon Carbide Epitaxy
N-Type SiC Epitaxy Grows N-Doped Layer on SiC,High Electron Mobility/Thermal Conductivity/Breakdown Field.
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Overview
Specifications
| Parameter | Value |
|---|---|
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter | 2 inch - 50.8mm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter | 4 inch - 100mm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter | 6 inch - 150mm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter | 8 inch - 200mm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Silicon Carbide Substrate Thickness [Substrate diameter: 2 inch - 50.8mm] | 350μm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Silicon Carbide Substrate Thickness [Substrate diameter: 4 inch - 100mm] | 350μm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Silicon Carbide Substrate Thickness [Substrate diameter: 6 inch - 150mm] | 350μm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Silicon Carbide Substrate Thickness [Substrate diameter: 8 inch - 200mm] | 500μm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Silicon Carbide Substrate Crystal Orientation | Off-Axis：4°toward <11-20>±0.5° |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Silicon Carbide Substrate Resistivity | 0.014～0.028 Ω•cm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Epitaxial Conductivity Type | N-type |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Dopant Element | N-doping |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Epitaxial-Layer Thickness [Substrate diameter: 2 inch - 50.8mm] | 5.5μm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Epitaxial-Layer Thickness [Substrate diameter: 4 inch - 100mm] | 11μm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Epitaxial-Layer Thickness [Substrate diameter: 6 inch - 150mm] | 15μm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Epitaxial-Layer Thickness [Substrate diameter: 8 inch - 200mm] | 30μm |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Epitaxial Layer Thickness Uniformity | ±6% |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Voltage-Withstand Model [Epitaxial-layer thickness: 5.5μm; substrate diameter: 2 inch - 50.8mm] | 650V |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Voltage-Withstand Model [Epitaxial-layer thickness: 11μm; substrate diameter: 4 inch - 100mm] | 1200V |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Voltage-Withstand Model [Epitaxial-layer thickness: 15μm; substrate diameter: 6 inch - 150mm] | 1700V |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Voltage-Withstand Model [Epitaxial-layer thickness: 30μm; substrate diameter: 8 inch - 200mm] | 3300V |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Doping Concentration [Epitaxial-layer thickness: 5.5μm; substrate diameter: 2 inch - 50.8mm] | 1.0E16 /cm3 |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Doping Concentration [Epitaxial-layer thickness: 11μm; substrate diameter: 4 inch - 100mm] | 8.0E15 /cm3 |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Doping Concentration [Epitaxial-layer thickness: 15μm; substrate diameter: 6 inch - 150mm] | 5.3E15 /cm3 |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Doping Concentration [Epitaxial-layer thickness: 30μm; substrate diameter: 8 inch - 200mm] | 3E15 /cm3 |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Doping Uniformity | ±10% |
| N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Epitaxial Layer Surface | Ra＜1nm |
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