β-Gallium Oxide <100>
Ga₂O₃ Ultrawide Bandgap~4.8eV,High Breakdown,Transparent Conductivity/Heat Resistance,Melt Growth/Film Deposition,Promising Power/Optoelectronics.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Dimensions | 5 mm × 5 mm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Dimensions | 10 mm × 10 mm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Dimensions | 2 inch - 50.8mm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Dimensions | 4 inch - 100mm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Thickness [Dimensions: 5*5mm] | 0.5mm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Thickness [Dimensions: 10*10mm] | 0.5mm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Thickness [Size: 2 Inches - 50.8mm] | 0.5mm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Thickness [Size: 4 Inches - 100mm] | 0.5mm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Surface Crystal Orientation | <100> ± 1.0° |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Dopant Element [Dimensions: 5*5mm] | Sn-doping |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Dopant Element [Dimensions: 10*10mm] | Fe-doping |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Dopant Element [Size: 2 Inches - 50.8mm] | Mg-doping |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Dopant Element [Size: 4 Inches - 100mm] | UID |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Resistivity [Dimensions: 5*5mm] | 0.01~0.05 ohm.cm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Resistivity [Dimensions: 10*10mm] | ＞1E10 ohm.cm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Resistivity [Size: 2 Inches - 50.8mm] | ＞1E10 ohm.cm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Resistivity [Size: 4 Inches - 100mm] | 0.1~1 ohm.cm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Doping Concentration [Dimensions: 5*5mm] | ~5E18 cm⁻³ |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Doping Concentration [Dimensions: 10*10mm] | Insulated |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Doping Concentration [Size: 2 Inches - 50.8mm] | Insulated |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Doping Concentration [Size: 4 Inches - 100mm] | <5E17 cm-3 |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Surface Condition [Dimensions: 5*5mm] | Single-Side Polished |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Surface Condition [Dimensions: 10*10mm] | Double-Side Polished |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Surface Condition [Size: 2 Inches - 50.8mm] | Ground |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Surface Condition [Size: 4 Inches - 100mm] | Slicing |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Roughness [Dimensions: 5*5mm] | <0.5nm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Roughness [Dimensions: 10*10mm] | <0.5nm |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Roughness [Size: 2 Inches - 50.8mm] | <5um |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Double-Crystal Rocking Curve FWHM | ＜150 arc sec |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Crystal Structure | Monoclinic Crystal System |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Bandgap | 4.8eV |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Melting Point | 1800℃ |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Mohs Hardness | 5^~6 |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Thermal Conductivity | 0.27W·cm⁻¹·℃⁻¹ |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Thermal Expansion Coefficient | αₐ=4.70×10⁻⁶; α_b=5.45×10⁻⁶; α_c=5.35×10⁻⁶ |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Lattice Constant (nm) | a=12。214Å; b=3。0371Å; c=5。7981Å |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Electron Mobility | 300 cm⁻²·V⁻¹·s⁻¹ |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - Breakdown Electric Field | 10.3 MV·cm⁻¹ |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - JFM Index (Power) | 2844 |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - BFM Index (SW) | 3214 |
| Gallium Oxide Single Crystal β-Ga2O3 <100> - BHFM Index (RF) | 142 |
Applications
Datasheet
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