Strontium Titanate STO
SrTiO₃ STO Perovskite Single-Crystal Substrate,Good Lattice Match/High Dielectric Constant/Transparency/Chemical Stability,for High-Tc Superconductors,Ferroelectric,Optoelectronic/Microelectronics.
Specification Snapshot
STO Strontium Titanate Substrate - Dimensions
5 mm × 5 mm
STO Strontium Titanate Substrate - Dimensions
10 mm × 10 mm
STO Strontium Titanate Substrate - Thickness
0.5mm
STO Strontium Titanate Substrate - Surface Condition
Single-Side Polished SSP, Double-Side Polished DSP
Crystal Configuration
Perovskite ABO₃, Cubic Phase (Room Temperature)
Transmission Interval
0.38~5 μm (UV-Mid-Infrared)
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Overview
SrTiO₃ STO Perovskite Single-Crystal Substrate,Good Lattice Match/High Dielectric Constant/Transparency/Chemical Stability,for High-Tc Superconductors,Ferroelectric,Optoelectronic/Microelectronics.
Specifications
| Parameter | Value |
|---|---|
| STO Strontium Titanate Substrate - Dimensions | 5 mm × 5 mm |
| STO Strontium Titanate Substrate - Dimensions | 10 mm × 10 mm |
| STO Strontium Titanate Substrate - Thickness | 0.5mm |
| STO Strontium Titanate Substrate - Main Surface Crystal Orientation | <100>、<001>、<111> |
| STO Strontium Titanate Substrate - Surface Condition | Single-Side Polished SSP, Double-Side Polished DSP |
| STO Strontium Titanate Substrate - Doping | Undoped, Nb-Doped, Fe-Doped |
| STO Strontium Titanate Substrate - Roughness | <0.2nm |
| Crystal Configuration | Perovskite ABO₃, Cubic Phase (Room Temperature) |
| Lattice Constant | 3.905 Å |
| Melting Point | 2080 ℃ |
| Mohs Hardness | 6.0~6.5 |
| Room-Temperature Permittivity [1MHz] | ≈300(1MHz) |
| Intrinsic Resistivity | 10¹²~10¹⁴ Ω·cm |
| Bandgap | 3.2 eV |
| Transmission Interval | 0.38~5 μm (UV-Mid-Infrared) |
| Visible-Light Refractive Index | 2.4 |
| Chemical Stability | Acid/Alkali Resistant, Oxidation Resistant, No Solid-Phase Diffusion |
Applications
High-Temperature Superconductivity; Ferroelectric/Piezoelectric Microelectronics; Optoelectronics/Optics; Frontier Semiconductors and Quantum Materials
Key Features
Other Dimensions and Parameters Customizable
Datasheet
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Supplier Information
Jiangyin Jingmu Optoelectronic New Materials Co., Ltd. is a technology-oriented enterprise dedicated to semiconductor wafer material processing and epitaxial technology. With a decade of focus on semiconductor substrates, including SiC, sapphire, silicon, and third/fourth-generation materials like diamond, GaN, Ga2O3, AlN, it also provides optical wafers and carrier products. Equipped with advanced processing technologies such as cutting, grinding, polishing, laser processing, epitaxial coating, and wafer bonding, it collaborates with universities for R&D, offering customized solutions. Products are widely used in LED, power devices, RF, and optical communication.
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