P-Type Silicon Carbide Epitaxy
P-Type SiC Epitaxy with Acceptor Dopants such as Al/B on SiC,Wide Bandgap,High Thermal Conductivity/Breakdown Field.
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Overview
Specifications
| Parameter | Value |
|---|---|
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter | 2 inch - 50.8mm |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter | 4 inch - 100mm |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter | 6 inch - 150mm |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter | 8 inch - 200mm |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Silicon Carbide Substrate Thickness [Substrate diameter: 2 inch - 50.8mm] | 350μm |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Silicon Carbide Substrate Thickness [Substrate diameter: 4 inch - 100mm] | 350μm |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Silicon Carbide Substrate Thickness [Substrate diameter: 6 inch - 150mm] | 350μm |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Silicon Carbide Substrate Thickness [Substrate diameter: 8 inch - 200mm] | 500μm |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Silicon Carbide Substrate Crystal Orientation | Off-Axis：4°toward <11-20>±0.5° |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Silicon Carbide Substrate Resistivity | 0.014～0.028 Ω•cm |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Epitaxial Conductivity Type | P-type |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Dopant Element | Al-doping |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Epitaxial Layer Thickness | ＜5μm |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Epitaxial Layer Thickness Uniformity | ≤6% |
| P-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Epitaxial Layer Surface | RMS＜1nm |
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Datasheet
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