Conductive Single-Crystal SiC Substrate
SiC Third-Generation Wide-Bandgap Group IV-IV1:1 C/Si Compound,Hardness Second to Diamond,High Thermal Conductivity/Breakdown Field.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Diameter | 50.8mm-2 inch |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Diameter | 100mm-4 inch |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Diameter | 150mm-6 inch |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Diameter | 200mm-8 inch |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Thickness [Diameter: 50.8mm-2 inch] | 350μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Thickness [Diameter: 100mm-4 inch] | 350μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Thickness [Diameter: 150mm-6 inch] | 350μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Thickness [Diameter: 200mm-8 inch] | 500μm |
| 4H-N Conductive Single-Crystal Silicon Carbide Substrate (2~8 Inches) - Surface Crystal Orientation | Off-Axis：4°toward <11-20>±0.5° |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Primary Reference-Flat Crystal Orientation [Diameter: 50.8mm-2 inch] | Parallel to <11-20>±1° |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Primary Reference-Flat Crystal Orientation [Diameter: 100mm-4 inch] | Parallel to <11-20>±1° |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Primary Reference-Flat Crystal Orientation [Diameter: 150mm-6 inch] | Parallel to <11-20>±1° |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Primary Reference-Flat Crystal Orientation [Diameter: 200mm-8 inch] | <1-100>±1° |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Primary Reference-Flat Length [Diameter: 50.8mm-2 inch] | 16.0mm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Primary Reference-Flat Length [Diameter: 100mm-4 inch] | 32.5mm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Primary Reference-Flat Length [Diameter: 150mm-6 inch] | 47.5mm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Primary Reference-Flat Length [Diameter: 200mm-8 inch] | Notch |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Secondary Reference-Flat Position [Diameter: 50.8mm-2 inch] | Silicon face up: 90.0˚ CW from Primary ± 5. |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Secondary Reference-Flat Position [Diameter: 100mm-4 inch] | Silicon face up: 90.0˚ CW from Primary ± 5. |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Secondary Reference-Flat Length [Diameter: 50.8mm-2 inch] | 8.0mm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Secondary Reference-Flat Length [Diameter: 100mm-4 inch] | 18.0mm |
| 4H-N Conductive Single-Crystal Silicon Carbide Substrate (2~8 Inches) - Resistivity | 0.014～0.028Ω•cm |
| 4H-N Conductive Single-Crystal Silicon Carbide Substrate (2~8 Inches) - Front Surface Condition | Si-Face：CMP,Ra<0.2nm |
| 4H-N Conductive Single-Crystal Silicon Carbide Substrate (2~8 Inches) - Back Surface Condition | C-Face：Optical Polish,Ra<0.5nm |
| 4H-N Conductive Single-Crystal Silicon Carbide Substrate (2~8 Inches) - Laser Marking Code Surface | Back side：C-Face |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Total Thickness Variation (TTV) [Diameter: 50.8mm-2 inch] | ≤10μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Total Thickness Variation (TTV) [Diameter: 100mm-4 inch] | ≤15μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Total Thickness Variation (TTV) [Diameter: 150mm-6 inch] | ≤15μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Total Thickness Variation (TTV) [Diameter: 200mm-8 inch] | ≤20μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Bow (BOW) [Diameter: 50.8mm-2 inch] | ≤25μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Bow (BOW) [Diameter: 100mm-4 inch] | ≤30μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Bow (BOW) [Diameter: 150mm-6 inch] | ≤40μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Bow (BOW) [Diameter: 200mm-8 inch] | ≤60μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Warp (WARP) [Diameter: 50.8mm-2 inch] | ≤30μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Warp (WARP) [Diameter: 100mm-4 inch] | ≤40μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Warp (WARP) [Diameter: 150mm-6 inch] | ≤60μm |
| Silicon Carbide 4H-N Conductive Single-Crystal Substrate (2~8 Inches) - Warp (WARP) [Diameter: 200mm-8 inch] | ≤80μm |
| 4H-N Conductive Single-Crystal Silicon Carbide Substrate (2~8 Inches) - Edge Exclusion | ≤3 mm |
| Silicon Carbide Single Crystal - Crystal Structure | Hexagonal Crystal |
| Silicon Carbide Single Crystal - Bandgap | 3.26eV |
| Silicon Carbide Single Crystal - Melting Point | 2730℃ |
| Silicon Carbide Single Crystal - Mohs Hardness | 9.2 mohs |
| Silicon Carbide Single Crystal - Thermal Conductivity | 4.9W·cm⁻¹·℃⁻¹ |
| Silicon Carbide Single Crystal - Thermal Expansion Coefficient | 4.7×10⁻⁶ |
| Silicon Carbide Single Crystal - Lattice Constant | a=0.3076 c=0.5048 |
| Silicon Carbide Single Crystal - Electron Mobility | 720ᵃ650ᶜ |
| Silicon Carbide Single Crystal - Breakdown Electric Field | 3.1 MV·cm⁻¹ |
| Silicon Carbide Single Crystal - JFM Index (Power) | 410 |
| Silicon Carbide Single Crystal - BFM Index (SW) | 290 |
| Silicon Carbide Single Crystal - BHFM Index (RF) | 34 |
| Silicon Carbide Single Crystal - Refractive Index | 2.6767～2.6480 |
Applications
Datasheet
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Supplier Information
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