Standard Gallium Antimonide
GaSb Substrate:Low Bandgap,High Electron Mobility/Thermal Stability,Core Material for Type II Superlattice IR Focal-Plane Chips.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Gallium Antimonide GaSb Single-Crystal Substrate (2~4 Inches) - Diameter | 50.8mm |
| Gallium Antimonide GaSb Single-Crystal Substrate (2~4 Inches) - Diameter | 76.2mm |
| Gallium Antimonide GaSb Single-Crystal Substrate (2~4 Inches) - Diameter | 100mm |
| Gallium Antimonide GaSb Single-Crystal Substrate (2~4 Inches) - Thickness [Diameter: 50.8mm] | 500μm |
| Gallium Antimonide GaSb Single-Crystal Substrate (2~4 Inches) - Thickness [Diameter: 76.2mm] | 600μm |
| Gallium Antimonide GaSb Single-Crystal Substrate (2~4 Inches) - Thickness [Diameter: 100mm] | 800μm |
| Gallium Antimonide GaSb Single-Crystal Substrate (2~4 Inches) - Surface Crystal Orientation | (100)/(111)/(110)±0.1° |
| Gallium Antimonide GaSb Single-Crystal Substrate (2~4 Inches) - Orientation-Flat Length [Diameter: 50.8mm] | 8±1mm |
| Gallium Antimonide GaSb Single-Crystal Substrate (2~4 Inches) - Orientation-Flat Length [Diameter: 76.2mm] | 11±1mm |
| Gallium Antimonide GaSb Single-Crystal Substrate (2~4 Inches) - Orientation-Flat Length [Diameter: 100mm] | 18±1mm |
| Gallium Antimonide GaSb Single-Crystal Substrate (2~4 Inches) - Total Thickness Variation TTV | <10μm |
| Gallium Antimonide GaSb Single-Crystal Substrate (2~4 Inches) - Bow | <10μm |
| Conductivity Type [Dopant Element: N/A; Carrier Concentration: ＜1*E17/cm³] | P-Type |
| Dislocation Density (EPD)/c [Dopant Element: N/A; Carrier Concentration: ＜1*E17/cm³] | 2inch ＜50 |
| Carrier Concentration [Dopant Element: N/A; Carrier Concentration: ＜1*E17/cm³] | ＜1*E17/cm³ |
| Electron Mobility [Dopant Element: N/A; Carrier Concentration: ＜1*E17/cm³] | 200~700cm²/v.s |
| Dopant Element [Dopant Element: Zn Doping; Carrier Concentration: >1*E18/cm³] | Zn-doping |
| Conductivity Type [Dopant Element: Zn Doping; Carrier Concentration: >1*E18/cm³] | P-Type |
| Dislocation Density (EPD)/c [Dopant Element: Zn Doping; Carrier Concentration: >1*E18/cm³] | 2inch＜1000 |
| Carrier Concentration [Dopant Element: Zn Doping; Carrier Concentration: >1*E18/cm³] | ＞1*E18/cm³ |
| Electron Mobility [Dopant Element: Zn Doping; Carrier Concentration: >1*E18/cm³] | 200~500cm²/v.s |
| Dopant Element [Dopant Element: Te Doping; Carrier Concentration: 1*E15-2*E17/cm³] | Te-doping |
| Conductivity Type [Dopant Element: Te Doping; Carrier Concentration: 1*E15-2*E17/cm³] | N Type |
| Dislocation Density (EPD)/c [Dopant Element: Te Doping; Carrier Concentration: 1*E15-2*E17/cm³] | 2inch＜200； 3inch＜500； 4inch＜1000 |
| Carrier Concentration [Dopant Element: Te Doping; Carrier Concentration: 1*E15-2*E17/cm³] | 1*E15-2*E17/cm³ |
| Electron Mobility [Dopant Element: Te Doping; Carrier Concentration: 1*E15-2*E17/cm³] | 2000-3500cm²/v.s |
| Dopant Element [Dopant Element: Te Doping; Carrier Concentration: (2-20)*E17/cm³] | Te-doping |
| Conductivity Type [Dopant Element: Te Doping; Carrier Concentration: (2-20)*E17/cm³] | N Type |
| Dislocation Density (EPD)/c [Dopant Element: Te Doping; Carrier Concentration: (2-20)*E17/cm³] | 2inch ＜50 |
| Carrier Concentration [Dopant Element: Te Doping; Carrier Concentration: (2-20)*E17/cm³] | （2-20）*E17/cm³ |
| Electron Mobility [Dopant Element: Te Doping; Carrier Concentration: (2-20)*E17/cm³] | 2000-3500cm²/v.s |
Applications
Datasheet
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