18-Wavelength 10G/25G DFB Laser Epitaxial Wafer

18-Wavelength 10G/25G DFB Laser Epitaxial Wafer

Supplier
Hxopto
Category
Optical Material
Origin
China
Specification Snapshot
Wavelength
1270nm-1610nm
Grating Type [1310nm; Typical Value]
EBL / Holography
Threshold Current [1310nm; Typical Value]
~8mA
Side Mode Suppression Ratio [1310nm; Typical Value]
>38dB
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Specifications

ParameterValue
Wavelength1270nm-1610nm
Grating Type [1310nm; Typical Value]EBL / Holography
Threshold Current [1310nm; Typical Value]~8mA
Slope Efficiency [1310nm; Typical Value]0.4mW/mA
Side Mode Suppression Ratio [1310nm; Typical Value]>38dB

Applications

CWDM PON 5G Front-Haul LWDW

Datasheet

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Supplier Information

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Hxopto
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Founded in 2016 and located in Pizhou, Jiangsu, the company is a national high-tech enterprise, a national specialized 'Little Giant' enterprise, and a potential unicorn enterprise. It focuses on the research and manufacturing of compound semiconductor optoelectronic epitaxial wafers, utilizing MOCVD, lithography, and nanoimprint technologies to produce InP- and GaAs-based semiconductor epitaxial wafers, which are widely used in laser communications, laser sensing, laser processing, RF power amplifiers, etc. The company has clean workshops, multiple production lines, and a technical team including 16 PhDs and 18 masters. It has accumulated over 50 patents and won multiple national and provincial innovation and entrepreneurship awards.

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18-Wavelength 10G/25G DFB Laser Epitaxial Wafer
Hxopto · Optical Material
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