CdTe — Cadmium Telluride

CdTe — Cadmium Telluride

Supplier
Thz-chip
Category
Optical Material
Origin
China

Cadmium telluride (CdTe) is a II–VI direct-bandgap compound semiconductor, molecular weight 240.01, CAS 1306-25-8. At room temperature it is a brown-black crystalline powder or cubic crystal, insoluble in water and ordinary acids except nitric acid, and oxidizes after prolonged storage in humid air. A direct bandgap of approximately 1.44–1.49eV, very high absorption coefficient of about 10⁵cm⁻¹ and excellent electrical properties attract interest for photovoltaics and photodetection.

Specification Snapshot
Refractive Index
Typ: 2.57~2.75
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Overview

Cadmium telluride (CdTe) is a II–VI direct-bandgap compound semiconductor, molecular weight 240.01, CAS 1306-25-8. At room temperature it is a brown-black crystalline powder or cubic crystal, insoluble in water and ordinary acids except nitric acid, and oxidizes after prolonged storage in humid air. A direct bandgap of approximately 1.44–1.49eV, very high absorption coefficient of about 10⁵cm⁻¹ and excellent electrical properties attract interest for photovoltaics and photodetection.

Specifications

ParameterValue
Molecular FormulaTyp: CdTe
Molecular WeightTyp: 240.01
CAS NumberTyp: 1306-25-8
Densitytypical:5.85~6.20g/cm³
Melting Pointtypical:1041~1092°C
Bandgaptypical:1.44~1.49eV
Refractive IndexTyp: 2.57~2.75
Carrier Concentration (Room Temperature)typical:~6×10¹⁶cm⁻³
Carrier Mobility (Room Temperature)typical:~1040cm²/(V s)
Purity Specificationstypical:6N(99.9999%)

Applications

Solar Cells:CdTe Is a Major Thin-Film Absorber;Only2μm CdTe Absorbs>90% under Standard AM1.5,Maximum Theoretical Conversion33%;Low Cost,Good Low-Light Performance/Low Temperature Coefficient for BIPV,Large Ground Plants,Agrivoltaics,Floating PV;Radiation Detectors:High Atomic Number,Good Absorption,Direct Bandgap for α/γ/X-Ray Research,Excellent Efficiency/Energy Resolution;IR Optoelectronics:Modulators,Source-Listed“Infrared-Window Electroluminescent Devices”,IR Detectors,and HgCdTe Substrates;Other Uses:Spectral Analysis,Photocells,Near-Visible Emitting Devices

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Supplier Information

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Thz-chip
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Xi'an Taihe Dixin Technology Co., Ltd. is a technology enterprise established through the transformation of achievements from the State Key Laboratory of Solidification Processing and the Key Laboratory of Radiation Detection Materials and Devices of the Ministry of Industry and Information Technology at Northwestern Polytechnical University. The company focuses on the growth of electro-optic crystals for terahertz (THz) wave generation and detection, high-energy ray and particle detection semiconductor crystals, and the design, preparation, and production of related devices, mastering core preparation technologies for advanced semiconductor crystal materials. Currently, it can produce large-size high-quality ZnTe crystals, organic semiconductor crystals BNA, perovskite crystals CsPbBr₃, neutron detection crystals 6LiInSe2, etc., and provide devices, systems, and testing solutions, offering a full-chain service of 'special functional crystals + core devices + intelligent equipment + solutions', empowering the high-quality development of industries such as aviation, aerospace, and nuclear energy.

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