Gallium Arsenide Window
Gallium arsenide (GaAs) crystals offer good chemical stability, high hardness, and exceptional harsh-environment resistance. High transmission over 2000nm-14000nm supports thermal-infrared imaging, high-power CO2 laser optics, and FLIR systems. In poor field conditions requiring repeated wiping, GaAs often replaces zinc selenide in infrared lenses/windows. Applications also include integrated circuits, optoelectronics, microelectronics, and solar cells. First, excellent electrical properties make GaAs useful as integrated-circuit substrates for high-frequency/high-speed devices, notably microwave devices and wireless-communication power amplifiers. Second, small, high-power GaAs lasers serve military fields such as radar manufacturing; GaAs LEDs also contribute to lighting and displays. In microelectronics, direct-ion-implantation self-aligned planar processing on GaAs substrates produces high-speed digital circuits, microwave monolithic circuits, optoelectronic integrated circuits, and low-noise high-power field-effect transistors. Fast speed, high frequency, and low consumption suit many electronic devices. Finally, GaAs solar-cell epitaxial wafers significantly improve conversion efficiency, supporting renewable energy, environmental protection, and sustainability. These varied applications demonstrate GaAs's importance and potential as a semiconductor.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Machinable Shapes | Circular, Rectangular, Polygonal and Other Shapes |
| Size Range - Diameter (Maximum Diagonal) | Φ8-Φ100mm |
| Size Range - Thickness | 0.05-50mm |
| Surface Figure PV | Reflected PV Better Than 1/4λ, Transmitted PV Better Than 1/10λ |
| Surface Finish | 10-5 20-10 40-20 |
| Surface Roughness | Less Than 5nm |
| Parallelism | Less Than 20″ |
| Coating | Coating Customizable to Customer Requirements |
| Density | 5.32 g/cm3 |
| Melting Point | 1238 ℃ |
| Coefficient of Thermal Expansion [300K] | 5.7*10⁻⁶@300K |
| Dielectric Constant, Static/High Frequency [300K] | 12.85/10.88@300K |
| Bulk Modulus | 101.32 GPa |
| Shear Modulus [298K] | 55.66@298K |
| Thermal Conductivity [300K] | 55@300K |
| Heat Capacity | 0.32 J/g.k |
| Knoop Hardness | 731 kg/mm² |
| Water solubility | 1.7 g/l |
| Young's Modulus [298K] | 138.5@298K |
| Poisson’s Ratio [293K] | 0.31@293K |
| Transmission Wavelength Range | 1000nm-14000nm |
| Absorption Coefficient [1500nm-11000nm] | 0.01@1500nm-11000nm |
| Thermo-Optic Coefficient dn/dT [3000nm-12000nm] | 160-120*10⁻⁶%@3000nm-12000nm |
| Refractive Index (n) [4000nm] | 3.31 |
| Refractive Index (n) [14500nm] | 2.82 |
| Refractive Index (n) [8000nm] | 3.34 |
| Refractive Index (n) [15000nm] | 2.73 |
| Refractive Index (n) [10000nm] | 3.13 |
| Refractive Index (n) [17000nm] | 2.59 |
| Refractive Index (n) [11000nm] | 3.04 |
| Refractive Index (n) [19000nm] | 2.41 |
| Refractive Index (n) [13000nm] | 2.97 |
| Refractive Index (n) [21900nm] | 2.12 |
| Refractive Index (n) [13700nm] | 2.89 |
Applications
Datasheet
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Supplier Information
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