Flame-fused opaque quartz FLHO321H FLHO321N
A large total bubble surface area per unit volume increases the scattering of thermal radiation within quartz glass; the English source describes increased reflection. This improves interception of thermal radiation. High thermal reflectance and low infrared transmittance provide good thermal insulation and heat retention, with an improved surface finish. Widely used in the thermal-insulation sections of quartz components for semiconductors and solar energy.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Etching rate [10% HF solution, 25℃, etching for 3 hours; Source also states: Solution: HF 10wt%,25℃,Etching time:3 hours; Flame-polished surface] | 0.07 μm/min |
| Etching rate [10% HF solution, 25℃, etching for 3 hours; Source also states: Solution: HF 10wt%,25℃,Etching time:3 hours; Ground surface] | 0.1 μm/min |
| Etching rate [10%KOH solution, 20℃, etching for 72 hours; Source also states: Solution: KOH 10wt%,20℃,Etching time:72 hours; Flame-polished surface] | 0.002 μm/min |
| Etching rate [10%KOH solution, 20℃, etching for 72 hours; Source also states: Solution: KOH 10wt%,20℃,Etching time:72 hours; Ground surface] | 0.005 μm/min |
| Al Impurity [FLHO321H] | typical:8.00 ppm |
| B impurity [FLHO321H] | typical:0.04 ppm |
| Ca Impurity [FLHO321H] | typical:0.60 ppm |
| Co impurity [FLHO321H] | typical:＜0.05 |
| Cu Impurity [FLHO321H] | typical:＜0.01 |
| Fe Impurity [FLHO321H] | typical:0.15 ppm |
| K Impurity [FLHO321H] | typical:0.07 ppm |
| Li Impurity [FLHO321H] | typical:0.15 ppm |
| Mg Impurity [FLHO321H] | typical:＜0.05 |
| Mn Impurity [FLHO321H] | typical:＜0.05 |
| Na Impurity [FLHO321H] | typical:0.12 ppm |
| Ni Impurity [FLHO321H] | typical:＜0.05 |
| Ti Impurity [FLHO321H] | typical:1.4 ppm |
| OH impurity [FLHO321H] | typical:~170 ppm |
| Al Impurity [FLHO321N] | typical:12.00 ppm |
| B impurity [FLHO321N] | typical:0.08 ppm |
| Ca Impurity [FLHO321N] | typical:0.30 ppm |
| Co impurity [FLHO321N] | typical:＜0.02 |
| Cu Impurity [FLHO321N] | typical:＜0.01 |
| Fe Impurity [FLHO321N] | typical:0.10 ppm |
| K Impurity [FLHO321N] | typical:0.20 ppm |
| Li Impurity [FLHO321N] | typical:0.40 ppm |
| Mg Impurity [FLHO321N] | typical:＜0.05 |
| Mn Impurity [FLHO321N] | typical:＜0.05 |
| Na Impurity [FLHO321N] | typical:0.40 ppm |
| Ni Impurity [FLHO321N] | typical:＜0.03 |
| Ti Impurity [FLHO321N] | typical:1.2 ppm |
| OH impurity [FLHO321N] | typical:~170 ppm |
| Density [FLHO321N] | 2.05 g/cm³ |
| Young's Modulus [FLHO321N] | 60 GPa |
| Vickers hardness [FLHO321N] | 8900 MPa |
| Dielectric Constant [FLHO321N；10GHz] | 3.74 |
| Dielectric loss [FLHO321N；500MHz] | ＜1×10⁻³ |
| Thermal Conductivity [FLHO321N；20℃] | 1.24 W/m.k |
| Specific Heat [FLHO321N；20℃] | 749 J/kg.k |
| Thermal Diffusivity [FLHO321N；20℃] | 8.4 ×10⁻⁷m²/s |
| Viscosity logη [FLHO321N; Equilibrium state; 1200℃] | 11.72 |
| Softening Point [FLHO321N] | 1670 ℃ |
| Annealing point [FLHO321N] | 1150 ℃ |
| Strain Point [FLHO321N] | 1070 ℃ |
| Coefficient of Thermal Expansion [FLHO321N；α；30℃~600℃] | 6.4 ×10⁻⁷/k |
| Density [FLHO321H] | 2.05 g/cm³ |
| Young's Modulus [FLHO321H] | 60 GPa |
| Vickers hardness [FLHO321H] | 8900 MPa |
| Dielectric Constant [FLHO321H；10GHz] | 3.74 |
| Dielectric loss [FLHO321H；500MHz] | ＜1×10⁻³ |
| Thermal Conductivity [FLHO321H；20℃] | 1.24 W/m.k |
| Specific Heat [FLHO321H；20℃] | 749 J/kg.k |
| Thermal Diffusivity [FLHO321H；20℃] | 8.4 ×10⁻⁷m²/s |
| Viscosity logη [FLHO321H; Equilibrium state; 1200℃] | 11.72 |
| Softening Point [FLHO321H] | 1670 ℃ |
| Annealing point [FLHO321H] | 1150 ℃ |
| Strain Point [FLHO321H] | 1070 ℃ |
| Coefficient of Thermal Expansion [FLHO321H；α；30℃~600℃] | 6.4 ×10⁻⁷/k |
Applications
Key Features
Datasheet
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