Compact Microchip Solid-State Laser
Specification Snapshot
Wavelength [Parameter Table Column Header: 1064nm]
1064 nm
Wavelength [Parameter Table Column Header: 532nm]
532 nm
Wavelength [Parameter Table Column Header: 355nm]
355 nm
Wavelength [Parameter Table Column Header: 266nm]
266 nm
Average Power [Parameter Table Column Header: 1064nm]
<500 mW
Average Power [Parameter Table Column Header: 532nm]
<250 mW
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Specifications
| Parameter | Value |
|---|---|
| Wavelength [Parameter Table Column Header: 1064nm] | 1064 nm |
| Wavelength [Parameter Table Column Header: 532nm] | 532 nm |
| Wavelength [Parameter Table Column Header: 355nm] | 355 nm |
| Wavelength [Parameter Table Column Header: 266nm] | 266 nm |
| Single-pulse energy [Parameter Table Column Header: 1064nm] | <5 mJ |
| Single-pulse energy [Parameter Table Column Header: 532nm] | <2.5 mJ |
| Single-pulse energy [Parameter Table Column Header: 355nm] | <1.25 mJ |
| Single-pulse energy [Parameter Table Column Header: 266nm] | <0.63 mJ |
| Average Power [Parameter Table Column Header: 1064nm] | <500 mW |
| Average Power [Parameter Table Column Header: 532nm] | <250 mW |
| Average Power [Parameter Table Column Header: 355nm] | <125 mW |
| Average Power [Parameter Table Column Header: 266nm] | <63 mW |
| Pulse width [Customizable] | 350-1000 (Customizable) |
| Repetition rate | 1-100 Hz |
| Divergence angle | ≤10 mrad |
| Beam quality M² | ≤2 |
| Spot Mode | TEM₀₀ |
| Polarization state | Random polarization/linear polarization (extinction ratio>100:1) |
| Energy Stability RMS | ≤2% |
| Input Power | <300 W |
| Cooling capacity | <50 W |
| Operating environment Temperature | 10-35 °C |
| Operating environment Humidity | <60 % |
| Laser Cooling Medium | Deionized water, distilled water, purified water |
Key Features
High-energy short-pulse seed for Mopa amplification, Raman, LIBS, laser-induced fluorescence, and ranging; long life/good beam quality; stable consistent low-fluctuation energy; custom specifications/complete solutions; CCD nearly flat-top spot; continuous 6000s with RMS<0.5%; measured width 369.44ps.
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Supplier Information
Xi'an Leite Electronic Technology Co., Ltd., referred to as Leite Technology, was established in 2016. It is a high-tech enterprise specializing in the research, development, production and sales of packaged high-power semiconductor laser devices, laser optical system application modules, and laser application systems. The company has unique competitive advantages in laser aesthetics, laser medical treatment, industrial laser and other fields, providing customized and personalized full-set product application solutions. The company has always adhered to the belief that "quality is the primary productive force", providing customers with high-quality services, corporate culture and service tenet.
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