Subnanosecond Laser GS-NIR300/NGN150/NUV30
Product types: 20 W MOPA fiber nanosecond laser GS-NIR20, 0.8ns-20ns; 300 W infrared nanosecond laser GS-NIR300, 0.8ns-20ns; 150 W green nanosecond laser GS-NGN150, 0.8ns; 30 W UV nanosecond laser GS-NUV30, 0.8ns. Model: GS-NGN series. Pulse width (ps): 0.8-20, 0.8, 0.8ns. Polarization: linear. Maximum output power (W): 300, 150, 30. Effective beam diameter (mm), 300mm from output aperture: 1.6±0.3. Repetition rate (KHz): 200-500, 50-500, 30-200. Center wavelength (nm): 064±0.2, 532±0.1, 355±0.1. Beam quality ㎡: ≤1.5. Power stability (%): <1.
Specification Snapshot
Power Consumption
<1 %
Weight
100 kg
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Overview
Product types: 20 W MOPA fiber nanosecond laser GS-NIR20, 0.8ns-20ns; 300 W infrared nanosecond laser GS-NIR300, 0.8ns-20ns; 150 W green nanosecond laser GS-NGN150, 0.8ns; 30 W UV nanosecond laser GS-NUV30, 0.8ns. Model: GS-NGN series. Pulse width (ps): 0.8-20, 0.8, 0.8ns. Polarization: linear. Maximum output power (W): 300, 150, 30. Effective beam diameter (mm), 300mm from output aperture: 1.6±0.3. Repetition rate (KHz): 200-500, 50-500, 30-200. Center wavelength (nm): 064±0.2, 532±0.1, 355±0.1. Beam quality ㎡: ≤1.5. Power stability (%): <1.
Specifications
| Parameter | Value |
|---|---|
| Working Mode | Pulsed (Pulse) |
| Center Wavelength | 1064±0.2、532±0.1、355±0.1 nm |
| Max Optical Average Power | 300、150、30 W |
| PSO Function | Supported |
| Pulse Width | 0.8-20、0.8、0.8 ns |
| Pulse Number | 1 |
| Pulse Repetition Rate | 200-500、50-500、30-200 KHz |
| Polarization | Linear Polarization (linear) |
| Extinction Ratio | > 20 dB |
| Max Pulse Energy | 2000、1000、300 uJ |
| Beam Quality M2 | ≤1.5 |
| Collimated Beam Diameter | 1.6±0.3 mm |
| Output Power Tunability | 0-100 % |
| Power Consumption | <1 % |
| Cable Length ( Cable Length) | 2 m |
| Power Consumption | 2000 W |
| Electrical Supply Voltage | 220 VDC |
| Operating Temperature | 20to30 °C |
| Storage Temperature | 0to50 °C |
| Volume (Dimensions)(LxWxH) | 900 mm × 420 mm × 208 mm |
| Weight | 100 kg |
Applications
Precision marking; solar-cell scribing; precision surface removal; PCB drilling.
Datasheet
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Supplier Information
Founded in 2011, Guoshen Optoelectronic Technology (Shanghai) Co., Ltd. is a state-controlled enterprise. The company is a national high-tech enterprise, a Shanghai Science and Technology Little Giant (cultivation) enterprise, and a Shanghai specialized and sophisticated enterprise. It has successively won honors and support such as China's SMEs Outstanding Innovation Achievement Enterprise, Excellent Enterprise in the 5th China Innovation and Entrepreneurship Competition and second place in the advanced manufacturing industry enterprise group, etc. It possesses multiple patents and has completed or is carrying out several national key special projects and local scientific research projects. Shanghai Guoshen attaches great importance to talent development, relying on a competitive development platform and scientific and reasonable incentive policies. It has built a R&D team composed of top experts, domestic optoelectronic and related professional masters and doctors, and continuously attracts more outstanding talents to join. The company has multiple patented technologies, with core technologies at the internationally leading level, and its product performance is at the forefront in the industry both domestically and internationally.
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