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Photonics Source provides 744 products. Download datasheets, request quotes, and compare function, price, and availability.
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High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ωcm to >10kΩcm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ωcm to >10kΩcm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity: <0.001 Ohm-cm to >10 kOhm-cm Crystal Material: MCZ, A-MCZ Device Layer Thickness: 1.0μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ω·cm to >10kΩ·cm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm -
High-performance silicon wafers
Wafer Size: 150-200mm Resistivity Range: <0.001Ω·cm to >10kΩ·cm Device Layer Thickness: 1μm to >200μm Buried Oxide Layer Thickness: 0.3μm to 4μm Handle Wafer Thickness: 300μm to 950μm
