Quil graphite ceramics

Quil graphite ceramics

Supplier
Syt-tech
Category
Optical Material
Origin
China

Suitable for optoelectronic/semiconductor equipment including MOCVD, red four-element and blue-light equipment; inquiries are welcome. 1. Quartz quality: GE124 raw material is described as top-quality AA grade, with few bubbles and low impurities. Trace-element composition is tested spectrometrically and expressed as weight ratios in ppm. Bubble-content notes: Cu.Ft. means cubic feet; Cu.Decimeter is labeled cubic inches. 2. Applications: the same optoelectronic/semiconductor equipment. 3. Product manufacturing process. 4. Product control. Graphite: SGL R6510 and R6650 materials have low impurity content, tested by SGS at the Taipei materials/engineering laboratory in Taiwan Province. Ceramic materials suit high temperatures and acid/alkali corrosion resistance. Applications include thin-film, yellow-light and etching-system components and robotic arms.

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Overview

Suitable for optoelectronic/semiconductor equipment including MOCVD, red four-element and blue-light equipment; inquiries are welcome. 1. Quartz quality: GE124 raw material is described as top-quality AA grade, with few bubbles and low impurities. Trace-element composition is tested spectrometrically and expressed as weight ratios in ppm. Bubble-content notes: Cu.Ft. means cubic feet; Cu.Decimeter is labeled cubic inches. 2. Applications: the same optoelectronic/semiconductor equipment. 3. Product manufacturing process. 4. Product control. Graphite: SGL R6510 and R6650 materials have low impurity content, tested by SGS at the Taipei materials/engineering laboratory in Taiwan Province. Ceramic materials suit high temperatures and acid/alkali corrosion resistance. Applications include thin-film, yellow-light and etching-system components and robotic arms.

Specifications

ParameterValue
impurities - Al [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]14 ppm
impurities - As [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]<0.002 ppm
impurities - B [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]<0.2 ppm
impurities - Ca [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]0.4 ppm
impurities - Cd [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]<0.001 ppm
impurities - Cr [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]<0.05 ppm
impurities - Cu [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]<0.05 ppm
impurities - Fe [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]0.2 ppm
impurities - K [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]0.6 ppm
impurities - Li [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]0.6 ppm
impurities - mg Mg [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]0.1 ppm
impurities - Mn [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]<0.05 ppm
impurities - Na [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]0.7 ppm
impurities - Ni [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]<0.1 ppm
impurities - P [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]<0.2 ppm
impurities - Sb [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]<0.003 ppm
impurities - Ti [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]1.1 ppm
impurities - Zr [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]0.8 ppm
Impurity Content—OH⁻ [Zigraphite GE124; Figure 5 Type 124; Spectrometer weight ratio, ppm from the retention of JSON ' s description of this table]<5 ppm
Bubble content [Shigeki GE124; figure 6; Bubble Size line: 1-2 mm (.040"–080”)]1 Number/Cu.Ft.
Bubble content [Shigeki GE124; figure 6; Bubble Size line: 1-2 mm (.040"–080”)].04 Number/Cu.Decimeter
Bubble content [Stonering GE124; figure 6; Bubble Size line: 5-1 mm (.020"–040”)]6 Number/Cu.Ft.
Bubble content [Stonering GE124; figure 6; Bubble Size line: 5-1 mm (.020"–040”)].21 Number/Cu.Decimeter
Bubble content [Shigeki GE124; figure 6; Bubble Size existing line: 5 (.020)]No Limit
Bubble content [Shigeki GE124; figure 6; Bubble Size existing line: 5 (.020)]No Limit
Density [graphite; figure 10; CZ5 R6510; source table unlisted]1.83
Porosity (open) [graphite; figure 10; CZ5 R6510; source table unlisted]10
Grain Size [graphite; figure 10; CZ5 R6510; source table unlisted]10
Rockwell Hardness [graphite; figure 10; CZ5 R6510 column; source table unincorporated; original tic text retained]95 HR5/100
Young's Modulus [graphite; figure 10; CZ5 R6510; source table unlisted]11.5
Flexural Strength [graphite; figure 10; CZ5 R6510; source table unlisted]60
Compressive Strength [graphite; figure 10; CZ5 R6510; source table unlisted]125
Specif. Electrical Resistivity [graphite; figure 10; CZ5 R6510; source table unlisted]13
Thermal Expansion [graphite; figure 10; CZ5 R6510; source table unlisted; 20-1000°C]5.1
Density [graphite; figure 10; column R6650; source table not indicated]1.84
Porosity (open) [graphite; figure 10; column R6650; source table not indicated]10
Grain Size [graphite; figure 10; column R6650; source table not indicated]7
Rockwell Hardness [graphite; figure 10; column R6650; source table unindicated; original tic text retained]95 HR5/100
Young's Modulus [graphite; figure 10; column R6650; source table not indicated]12.5
Flexural Strength [graphite; figure 10; column R6650; source table not indicated]65
Compressive Strength [graphite; figure 10; column R6650; source table not indicated]150
Specif. Electrical Resistivity [graphite; figure 10; column R6650; source table not indicated]14
Thermal Expansion [graphite; figure 10; column R6650; unit not indicated in source table; 20-1000°C]5.0

Applications

Stone quality: for various photovoltaic, semiconductor special equipment (MOCVD, red light, blue light, etc.), welcome details. Ceramic materials: thin film, yellow light, etching system components and mechanical arm.

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Supplier Information

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Syt-tech
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Shaanxi Yuteng Electronic Technology Co., Ltd. is a high-tech enterprise dedicated to the design and production of third-generation semiconductor gallium nitride epitaxial wafers and optical communication thick oxide epitaxial silicon wafers. Its core technology comes from a senior semiconductor team in Taiwan. In 2020, its third-generation semiconductor gallium nitride and oxide epitaxial wafer development and industrialization project landed in the New Material Industrial Park as a key investment attraction project of Tongchuan City. In terms of GaN technology research and development, the company has recruited many senior semiconductor talents from Taiwan, China, and has formed a technical closed loop in process development, hardware equipment improvement, raw material design and development, etc. The company has a complete GaN epitaxial wafer production line and multiple patent achievements, and can provide professional design solutions and stable raw material supply for the semiconductor equipment and optical communication fields. At this stage, the company is the first in western China to achieve large-scale mass production of GaN epitaxial wafers and silicon photonics epitaxial wafers, with complete mass production lines and stable supply capabilities. Shaanxi Yuteng Electronic Technology Co., Ltd. was established in 2015 in Xi'an Economic and Technological Development Zone. Adhering to the spirit of integrity, cooperation and win-win, it is committed to the repair and refurbishment of second-hand equipment related to LED, display, and semiconductor electronics, new equipment agency, uncoated graphite products and silicon carbide business, as well as quartz products and ceramic products used in high-temperature environments, semiconductor packaging and cutting materials, etc., providing customized products for customers.

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