Gallium Arsenide
Gallium arsenide is an important III–V compound semiconductor with a zinc-blende lattice, lattice constant 5.65×10-10m, melting point 1237℃ and bandgap 1.4eV. It entered practical use in 1964. Semi-insulating high-resistivity GaAs can have resistivity more than 3 orders of magnitude above silicon and germanium, supporting integrated-circuit substrates, infrared detectors and γ-photon detectors. Electron mobility 5~6 times that of silicon makes it important for microwave devices and high-speed digital circuits. GaAs devices offer good high-frequency, high/low-temperature performance, low noise and strong radiation resistance. It also supports transferred-electron bulk-effect devices. Despite its multiple advantages, GaAs transistors have low gain and poor thermal conductivity, making them unsuitable for high-power devices. Decomposition at high temperature makes high-purity single-crystal growth at ideal stoichiometry technically demanding.
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