INP

A-M-R Orientation Single-Crystal Sapphire Substrate (2~6 Inches) - Material Composition: >99.99%，High Purity， Mono-crystalline Al2O3 (KY) Sapphire A/M/R-Plane Single-Crystal Substrate (2~6 Inches) - End-Face Crystal Orientation [Diameter: 50.8mm]: A-plane (11-20) ± 0.1° Sapphire A/M/R-Plane Single-Crystal Substrate (2~6 Inches) - End-Face Crystal Orientation [Diameter: 100mm]: A-plane (11-20) ± 0.1°

α-Al2O3 Hexagonal Lattice,Chemically Stable/Water-Insoluble/Strong Acid-Alkali Resistant,Mohs9,Melts2050℃/Boils3500℃,Operating up to1900℃,Good Transmission/Thermal Conduction/Insulation/Mechanics,Wear/Scratch Resistance.

N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter: 2 inch - 50.8mm N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter: 4 inch - 100mm N-Type Silicon Carbide Epitaxial Substrate (2~8 Inches) - Substrate Diameter: 6 inch - 150mm

N-Type SiC Epitaxy Grows N-Doped Layer on SiC,High Electron Mobility/Thermal Conductivity/Breakdown Field.

Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter: 50.8mm Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter: 100mm Silicon-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter: 150mm

GaN-on-Si Epitaxy Grows GaN Films on Silicon,Combining GaN Performance with Low-Cost Silicon.

High-Borosilicate Glass - Material: BF33 High-Borosilicate Glass - Diameter: 50.8mm High-Borosilicate Glass - Diameter: 100mm

BF33 Special Borosilicate Glass with Low Expansion,Heat Resistance,Chemical Stability and Excellent Transmission.

Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter: 50.8mm Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter: 100mm Sapphire-Based GaN Epitaxial Template Substrate (2~8 Inches) - Substrate Diameter: 150mm

GaN-on-Sapphire Epitaxial Template Grows GaN Film on Al₂O₃,Common Substrate for Heat/Chemical Stability/Cost Advantages.