Yb:YAG Crystal
Yb:YAG is one of the most promising laser-active materials and more suitable for diode-pumping than the traditional Nd-doped systems. Compared with the commonly used Nd:YAG crsytal, Yb:YAG crystal has a much larger absorption bandwidth to reduce thermal management requirements for diode lasers, a longer upper-laser level lifetime, three to four times lower thermal loading per unit pump power. Yb:YAG crystal is expected to replace Nd:YAG crystal for high power diode-pumped lasers and other potential applications.
Specification Snapshot
Laser Wavelength
1030 nm
Index of Refraction
1.82
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Overview
Yb:YAG is one of the most promising laser-active materials and more suitable for diode-pumping than the traditional Nd-doped systems. Compared with the commonly used Nd:YAG crsytal, Yb:YAG crystal has a much larger absorption bandwidth to reduce thermal management requirements for diode lasers, a longer upper-laser level lifetime, three to four times lower thermal loading per unit pump power. Yb:YAG crystal is expected to replace Nd:YAG crystal for high power diode-pumped lasers and other potential applications.
Specifications
| Parameter | Value |
|---|---|
| Dopant concentration [Yb] | 0.5~25 at% |
| Orientation | [100] or [111] within5° |
| Wavefront Distortion | ≤0.125λ/inch |
| Extinction Ratio | ≥28 dB |
| Rod Sizes [Upon request of customer] | Diameter:2~20mm; Length:5~150mm |
| Dimensional Tolerances | Diameter:+0.00/-0.05mm; Length:±0.5mm |
| Barrel Finish | Ground Finish with400# Grit or polished |
| Parallelism | ≤10″ |
| Perpendicularity | ≤5′ |
| Flatness [@632.8nm] | λ/10 |
| Surface Quality | 10-5 (MIL-O-13830B) |
| Chamfer | 0.15±0.05 mm |
| AR Coating Reflectivity [@1030nm] | ≤0.25 % |
| Crystal Structure | Cubic |
| Lattice Parameters | 12.01 Å |
| Melting Point | 1970 °C |
| Moh Hardness | 8.5 |
| Density | 4.56±0.04 g/cm³ |
| Specific Heat [0~20; original compound unit retained as supplied] | 0.59J/g.cm³ |
| Modulus of Elasticity | 310 GPa |
| Young's Modulus | 3.17×10⁴ |
| Poisson Ratio [est.] | 0.3 |
| Tensile Strength | 0.13~0.26 GPa |
| Thermal Expansion Coefficient [[100]Direction;0~250℃] | 8.2×10⁻⁶ |
| Thermal Expansion Coefficient [[110]Direction;0~250℃] | 7.7×10⁻⁶ |
| Thermal Expansion Coefficient [[111]Direction;0~250℃] | 7.8×10⁻⁶ |
| Thermal Conductivity [@20℃] | 14 W/m/K |
| Thermal Conductivity [@100℃] | 10.5 W/m/K |
| Thermal Optical Coefficient [dn/dT] | 7.3×10⁻⁶ |
| Thermal Shock Resistance | 790 W/m |
| Solubility [Source wording] | Water:Insoluble; Common Acid:Slightly |
| Laser Transition | ²F₅/₂→²F₇/₂ |
| Laser Wavelength | 1030 nm |
| Photon Energy [@1030nm] | 1.93×10⁻¹⁹ |
| Emission Linewidth | 9 nm |
| Emission Cross Section | 2.0×10⁻²⁰ |
| Fluorescence Lifetime | 1.2 ms |
| Diode Pump Band | 940nm or970nm |
| Pump Absorption Band Width | 8 nm |
| Index of Refraction | 1.82 |
Key Features
Very low fractional heating, less than11% Very high slope efficiency Broad absorption bands, about 8nm@940nm No excited-state absorption or up-conversion Conveniently pumped by reliable InGaAs diodes at 940nm (or 970nm) High thermal conductivity and large mechanical strength High optical quality
Datasheet
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Supplier Information
THATSHIGH Photoelectric Technology Co., Ltd. was founded in November 2004 by several passionate young people with overseas research background and international business experience. Since its establishment, THATSHIGH has been focusing on the development of optical materials and laser components, such as nonlinear crystals, laser crystals and Pockels cells. As a registered high-tech enterprise in China, THATSHIGH has been continuously investing in R&D and has become one of the most important international suppliers of Pockels cells, NLO crystals, laser crystals and optical components. Currently over 40% of its products are shipped to dozens of overseas business partners, earning worldwide trust for qualified products and competitive prices.
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