Nd:YAG

Dopant Concentration: 0.1─ 4.0 atm % Diameter r: 1.5─ 25.0 Length: 0.5─30.0

Density:4.22 g/cm2; melting point:1810 ±25℃; orientation:a-cut crystalline direction (+/-5℃); wavefront distortion:<λ/8 at 633nm; surface quality:better than20/10 Scratch/Dig; parallelism:<10 arc seconds; perpendicularity:<5 arc minutes; flatness:<λ/10 at 632.8nm; bevel:0.15x45o. Neodymium-doped yttrium vanadate (Nd:YVO4). Nd:YVO4 is an excellent crystal for diode-pumped lasers, especially low-to-medium power. Compared with Nd:YAG, Nd:YVO4 offers higher pump absorption and a larger stimulated-emission cross-section. Diode-pumped Nd:YVO4 combined with LBO, BBO, or KTP provides efficient frequency doubling for NIR, green, blue, and UV all-solid-state sources. Nd:YVO4 lasers serve machinery, materials processing, spectroscopy, wafer inspection, displays, medical testing, laser printing, and storage. Nd:YVO4 diode-pumped systems are replacing water-cooled ion and lamp-pumped lasers, especially for compactness and single-longitudinal-mode output. Basic properties Crystal Structure | Tetragonal Lattice ConstantsÅ | a = b = 7.12, c= 6.29 Density g/cm3 | 4.22 Mohs Hardness | 8 - 9 Melting Point , °C | 2105 Refractive Index | at 1064 nm | no=1.9573; ne=2.1652 at 808 nm | no=1.9721; ne=2.1858 at 532 nm | no=2.0210; ne=2.2560 Thermal Expansion Coefficient | αc= 11.37 x 10-6x °K-1 Thermal Shock Resistance @25°C, W / m-1x °K-1, c-axis | 5.10 Emission Wavelength nm | 914, 1064, 1342 Nd:YVO4 vs Nd:YAG Laser Properties Comparison Laser Crystal | Dopant Concentration(atm%) | s (x10-19cm2) | a (cm-1) Nd:YVO4(a-cut) | 1.0 | 25 | 31.2 Nd:YVO4(a-cut) | 2.0 | 25 | 72.4 Nd:YVO4(c-cut) | 1.1 | 7 | 9.2 Nd:YAG | 0.85 | 6 | 7.1

Doping concentration: Tm:1.0 ~ 4.0 at%. Wavefront distortion: ≤0.125λ/25mm@632.8nm. Crystal rod dimensions: available to customer requirements. Dimensional tolerance: diameter:+0.00/-0.05mm, length:± 0.5mm. Barrel processing: fine grinding or polishing. End-face parallelism:≤10". End-face perpendicularity to rod axis:≤5′. End-face flatness:≤λ/8@632.8nm. Surface finish:gradeⅠ. Edge bevel:0.2±0.05mm. Tm:YAP is an important diode-pumped crystal for2μm laser emission. Although its physical and chemical properties resemble Tm:YAG, its795nm pump absorption band better matches commonly used high-power AlGaAs diodes, and its pump absorption bandwidth is4nm wider than Tm:YAG, giving higher efficiency and direct linearly polarized output. Tm:YAP has important medical-laser and military applications. Crystal structure: orthorhombic. Lattice constants:a = 0.5138 nm, b = 0.5274 nm/c = 0.7308 nm (space group Pbnm). Melting point:1870 °C. Density:5.35 g/cm³. Mohs hardness:8.5. Specific heat:400 J/(kg ·K). Thermal conductivity:11W/(m·K). Refractive indices:n_ₐ=1.91, n__b=1.92, n__c=1.94.

Chemical formula: Y₃₋₃ₓCe₃ₓAl₅O₁₂ The crystal structure: Cubic crystal system Lattice parameters: 12.01 Å

Ce:YAG crystal is an important kind of scintillation crystals. Compared with other inorganic scintillators, Ce:YAG crystal holds a high luminous efficiency and a wide light pulse. Especially, its emission peak is 550nm, which well matched with the sensitivity detect wavelength of the silicon photodiode detection. Thus, it is very suitable for the scintillators of the equipments that taken the photodiode as detectors and the scintillators to detect the light charged particles. At this time, a high coupling efficiency can be achieved. Furthermore, Ce:YAG can also be commonly used as a phosphor in cathode ray tubes and white light-emitting diodes. Density: 4.57 g/cm3 Hardness by Mohs: 8.5 Index of refraction: 1.82 Melting point: 1970°C Thermal expansion: 0.8-0.9 x 10-5/K Crystal structure: cubic Advantage of Nd YAG Rod: Higher coupling efficiency with the silicon photodiode detection No afterglow Short decay time Stable physical and chemical property