Tm:YAP
Doping concentration: Tm:1.0 ~ 4.0 at%. Wavefront distortion: ≤0.125λ/25mm@632.8nm. Crystal rod dimensions: available to customer requirements. Dimensional tolerance: diameter:+0.00/-0.05mm, length:± 0.5mm. Barrel processing: fine grinding or polishing. End-face parallelism:≤10". End-face perpendicularity to rod axis:≤5′. End-face flatness:≤λ/8@632.8nm. Surface finish:gradeⅠ. Edge bevel:0.2±0.05mm. Tm:YAP is an important diode-pumped crystal for2μm laser emission. Although its physical and chemical properties resemble Tm:YAG, its795nm pump absorption band better matches commonly used high-power AlGaAs diodes, and its pump absorption bandwidth is4nm wider than Tm:YAG, giving higher efficiency and direct linearly polarized output. Tm:YAP has important medical-laser and military applications. Crystal structure: orthorhombic. Lattice constants:a = 0.5138 nm, b = 0.5274 nm/c = 0.7308 nm (space group Pbnm). Melting point:1870 °C. Density:5.35 g/cm³. Mohs hardness:8.5. Specific heat:400 J/(kg ·K). Thermal conductivity:11W/(m·K). Refractive indices:n_ₐ=1.91, n__b=1.92, n__c=1.94.
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