PD Detector PDTO-Si10
PDTO-Si10 is a silicon photodiode introduced by the company. Highly sensitive to visible and near-infrared light, it is widely used in optical power testing, optical sensing and distance sensing.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Spectral Response Range λ [Performance Specifications ;T_c=25℃, Unless otherwise specified] | min:400 nm; max:1100 nm |
| Peak Wavelength [Performance Specifications ;T_c=25℃, Unless otherwise specified] | typical:900 nm |
| Photosensitive Surface Diameter [Performance Specifications ;T_c=25℃, Unless otherwise specified] | typical:1 mm |
| Breakdown Voltage [Performance Specifications ;T_c=25℃, Unless otherwise specified] | min:60 V |
| Dark Current I_d [Performance Specifications ;T_c=25℃, Unless otherwise specified ;Vbias=-10V] | max:10 |
| Capacitance [Performance Specifications ;T_c=25℃, Unless otherwise specified ;Vbias=-5V] | max:5 pF |
| Rise/Fall Time [Performance Specifications ;T_c=25℃, Unless otherwise specified] | max:5 ns |
| Cap height [Performance Specifications ;T_c=25℃, Unless otherwise specified] | typical:2.5 mm |
| Clear Aperture Dimension [Performance Specifications ;T_c=25℃, Unless otherwise specified] | min:2 mm |
| Operating Temperature T_op [Rated limiting values] | -20~85 °C |
| Storage Temperature T_stg [Rated limiting values] | -40~85 °C |
| Soldering temperature [Rated limiting values] | 260 °C |
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Key Features
Datasheet
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Supplier Information
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