ZPD-Z6048C ZPD-Z6048C-10D-Z1-02
ZPD-Z6048C-10D-Z1-02 is a high-speed, high-sensitivity PIN photodiode molded in a miniature flat-top-view lens SMD package. Its clear epoxy makes it sensitive to visible and near-infrared radiation. Package dimensions — Notes: all dimensions are in millimeters. Unless otherwise specified, dimensional tolerances are ±0.2mm.
Save to Favorites
Overview
Specifications
| Parameter | Value |
|---|---|
| Power Consumption Power Dissipation Pd [Absolute Maximum Ratings ;Ta=25℃] | 150 mW |
| Reverse Voltage VR [Absolute Maximum Ratings ;Ta=25℃] | 32 V |
| Operating Temperature Operating Temperature Topr [Absolute Maximum Ratings ;Ta=25℃] | -25~+85 ℃ |
| Storage Temperature Tstg [Absolute Maximum Ratings ;Ta=25℃] | -25~+85 ℃ |
| Lead Soldering Temperature Tsol [Absolute maximum ratings; Ta=25℃; soldering for no more than 5s at least 2mm away from the encapsulant] | 260 ℃ |
| Open-Circuit Voltage Voc [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；λp=940nm] | min ：30 |
| Short-Circuit Current Isc [Optoelectronic Characteristics ；Ta=25℃；I_C=100μA；Ee=0mW/cm²] | typical ：35 |
| Reverse Light Current I_L [Optoelectronic Characteristics ；Ta=25℃；Ee=1mW/cm²；λp=940nm；V_R=5V] | typical ：30 |
| Rise Time t_r [Optoelectronic Characteristics ；Ta=25℃；V_CE=5V；I_C=1mA；R_L=1000Ω] | typical ：50 |
| Fall Time t_f [Optoelectronic Characteristics ；Ta=25℃；V_CE=5V；I_C=1mA；R_L=1000Ω] | typical ：50 |
| Peak Wavelength λ₀.₅ [Optoelectronic Characteristics ；Ta=25℃] | min ：400； max ：1100 |
| Spectral Bandwidth λ_P [Optoelectronic Characteristics ；Ta=25℃] | typical ：940 |
| Reverse Dark Current Id [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；V_R=5V] | max ：10 |
| Reverse Breakdown Voltage VBR [Optoelectronic Characteristics ；Ta=25℃；Ee=0mW/cm²；I_R=100μA] | typical ：170 |
| Forward Voltage VF [Optoelectronic Characteristics ；Ta=25℃；I_F=20mA] | min ：0.5； max ：1.3 |
| Emission Angle (View Angle) 2θ1/2 [Optoelectronic Characteristics ；Ta=25℃；V_R=5V] | typical ：125 |
| Loaded Quantity [Reel Packaging] | 1000 pcs/reel |
Applications
Key Features
Datasheet
Supplier Information
Related Products
-
XY035 Type Silicon φ500μm Avalanche Photodiode Photodiodes Yagcrystal
Spectral Range λ [@T=22℃]: 最小：450；典型：800；最大：1100 Photosensitive Diameter [@T=22℃]: 典型：500 Responsivity [@T=22℃；M=100；λ=905nm]: 最小：52；典型：58；最大：60
Features: ● Spectral range 450–1100nm ● Avalanche gain ● TO46 package with optical window. Applications: laser ranging; free-space laser communications; data transmission
-
APD Detector InGaAs-200 APD TO Photodiodes Lidar-tech
Spectral Response Range λ [Performance Specifications ;T_c=25℃, Unless otherwise specified]: min:950 nm; max:1700 nm Photosensitive Surface Diameter [Performance Specifications ;T_c=25℃, Unless otherwise specified]: typical:200 um Responsivity [Performance Specifications ;T_c=25℃, Unless otherwise specified ;λ=1550nm;P_in=1μW;M=1]: min:0.9 A/W; typical:1 A/W
InGaAs-200 APD TO is an InGaAs-based APD detector introduced by the company, with a photosensitive diameter of 200 micrometers. It offers high responsivity, high multiplication and low dark current, and is widely used in distance measurement, free-space optical transmission, optical time-domain reflectometry and low-light-level detection.
-
PD Detector InGaAs-300 PD InGaAs-300 PD TO Photodiodes Lidar-tech
Spectral Response Range λ [Performance Specifications ;T_c=25℃, Unless otherwise specified]: min:900 nm; max:1650 nm Photosensitive Surface Diameter [Performance Specifications ;T_c=25℃, Unless otherwise specified]: typical:300 um Responsivity [Performance Specifications ;T_c=25℃, Unless otherwise specified ;λ=1310nm;P_in=1μW]: min:0.8 A/W
InGaAs-300 PD TO is the company's InGaAs-based PD detector with a photosensitive diameter of 300 micrometers, high responsivity, low capacitance and low dark current. It is widely used in optical power testing, optical sensing and distance sensing.
-
PD Detector PDTO-Si10 Photodiodes Lidar-tech
Spectral Response Range λ [Performance Specifications ;T_c=25℃, Unless otherwise specified]: min:400 nm; max:1100 nm Peak Wavelength [Performance Specifications ;T_c=25℃, Unless otherwise specified]: typical:900 nm Photosensitive Surface Diameter [Performance Specifications ;T_c=25℃, Unless otherwise specified]: typical:1 mm
PDTO-Si10 is a silicon photodiode introduced by the company. Highly sensitive to visible and near-infrared light, it is widely used in optical power testing, optical sensing and distance sensing.
Related Articles
Driven by the continuous pursuit of higher precision and efficiency in optical communication and optoelectronic device manufacturing, OLCR-1000 Low-Coherence Interferometer, independently developed by Wuhan Guanggu Interconnect Technology Co., Ltd., provides an innovative technical solution for distributed return loss testing of optical fibers and optoelectronic devices.
icrolight is a high-tech enterprise specializing in the R&D, manufacturing and sales of active and passive photonic devices for microwave photonics, LiDAR ranging, gas sensing, fiber optics and photomedicine.
BEIJING JIEPU TREND supplies YAG+Er:YAG+YAG bonded composite slab laser crystals for high‑power solid‑state laser systems. The monolithic slab consists of two undoped YAG end‑cap layers and a central Er‑doped YAG gain segment. The overall dimension is 9 mm×9 mm×9 mm.
Shanghai Connet Laser Technology Co., Ltd. focuses on technological innovation, delivering cutting-edge photonic products & solutions for industrial lasers, LiDAR, fiber optic sensing, coherent telecom, cold atom physics and precision spectroscopy research & mass manufacturing.
Loading...
Name
Phone
Organization
Use Case
Database Platform