APD Detector InGaAs-200 APD TO
InGaAs-200 APD TO is an InGaAs-based APD detector introduced by the company, with a photosensitive diameter of 200 micrometers. It offers high responsivity, high multiplication and low dark current, and is widely used in distance measurement, free-space optical transmission, optical time-domain reflectometry and low-light-level detection.
Specification Snapshot
Responsivity [Performance Specifications ;T_c=25℃, Unless otherwise specified ;λ=1550nm;P_in=1μW;M=1]
min:0.9 A/W; typical:1 A/W
Dark Current I_d [Performance Specifications ;T_c=25℃, Unless otherwise specified ;V_R=V_BR-3;P_in=0μW]
typical:8; max:50
Capacitance [Performance Specifications ;T_c=25℃, Unless otherwise specified ;V_R=V_BR-3;f=1MHz]
typical:1.8 pF; max:2 pF
Operating Temperature T_op [Rated limiting values]
-20~+85 °C
Storage Temperature T_stg [Rated limiting values]
-40~+85 °C
Forward Current I_F [Rated limiting values]
5 mA
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Overview
InGaAs-200 APD TO is an InGaAs-based APD detector introduced by the company, with a photosensitive diameter of 200 micrometers. It offers high responsivity, high multiplication and low dark current, and is widely used in distance measurement, free-space optical transmission, optical time-domain reflectometry and low-light-level detection.
Specifications
| Parameter | Value |
|---|---|
| Spectral Response Range λ [Performance Specifications ;T_c=25℃, Unless otherwise specified] | min:950 nm; max:1700 nm |
| Photosensitive Surface Diameter [Performance Specifications ;T_c=25℃, Unless otherwise specified] | typical:200 um |
| Responsivity [Performance Specifications ;T_c=25℃, Unless otherwise specified ;λ=1550nm;P_in=1μW;M=1] | min:0.9 A/W; typical:1 A/W |
| Multiplication factor [Performance Specifications ;T_c=25℃, Unless otherwise specified ;λ=1550nm;P_in=1μW;V_R=V_BR-3] | min:10 |
| Multiplication factor [Performance Specifications ;T_c=25℃, Unless otherwise specified ;λ=1550nm;P_in=1μW;V_R=V_BR-1] | min:30 |
| Dark Current I_d [Performance Specifications ;T_c=25℃, Unless otherwise specified ;V_R=V_BR-3;P_in=0μW] | typical:8; max:50 |
| -3dB Cut-off Frequency BW [Performance Specifications ;T_c=25℃, Unless otherwise specified ;M=10;R_L=50Ω] | min:0.6 GHz; typical:1.25 GHz |
| Reverse Breakdown Voltage V_BR [Performance Specifications ;T_c=25℃, Unless otherwise specified ;I_R=10μA;P_in=0μW] | min:35 V; max:50 V |
| Capacitance [Performance Specifications ;T_c=25℃, Unless otherwise specified ;V_R=V_BR-3;f=1MHz] | typical:1.8 pF; max:2 pF |
| Breakdown-voltage temperature coefficient Y [Performance Specifications ;T_c=25℃, Unless otherwise specified ;I_R=10μA;P_in=0μW;-55℃~+85℃] | min:0.05 V/℃; typical:0.11 V/℃; max:0.15 V/℃ |
| Operating Temperature T_op [Rated limiting values] | -20~+85 °C |
| Storage Temperature T_stg [Rated limiting values] | -40~+85 °C |
| APD bias voltage V_PD [Rated limiting values] | V_BR |
| Forward Current I_F [Rated limiting values] | 5 mA |
| Reverse current I_R [Rated limiting values] | 3 mA |
Applications
LiDAR
Key Features
TO Package
Datasheet
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Supplier Information
Lingtu Technology is a national high-tech enterprise founded in 2017, possessing full-stack product R&D capabilities from chips to devices, modules, sensors, and industry solutions. Headquartered in Wuhan Optics Valley, with manufacturing in Yichang and sales offices in Shanghai, Shenzhen, Suzhou, etc., the company focuses on optoelectronic technology and sensors, providing comprehensive services from device packaging, module assembly to system design and solutions. With over 20 years of experience in complex optoelectronic sensing system R&D, large-scale optical communication manufacturing, and precision optical device assembly, its products are widely used in smart home, smart city, intelligent surveying, and embodied intelligence.
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