AgGaS₂
AgGaS₂ (silver gallium sulfide, AGS) is a typical compound semiconductor with an I-Ⅲ-VⅥ₂ chalcopyrite structure. It is pale yellow at room temperature and has a broad infrared transparency range, a large nonlinear coefficient, substantial birefringence (~0.054), a bandgap of 2.75eV, a high figure of merit, and a high optical damage threshold. It can be used for second-harmonic generation, sum-frequency generation, and optical parametric oscillation. In particular, AgGaS₂ used as a parametric upconversion device can achieve 90° noncritical phase matching at room temperature and convert infrared light in the 10.2~11.6 μm band into 0.566μm green light over 0~100℃. This is significant for remote sensing, ranging, and spectroscopic measurement using tunable CO₂ lasers as probe sources. AgGaS₂ is an advanced infrared nonlinear optical material with excellent performance and research and application potential in infrared detection, infrared remote control, infrared monitoring, laser communication, national defense, science, and technology.
Overview
Specifications
| Parameter | Value |
|---|---|
| Chemical formula | AgGaS₂ |
| Transmission range | 0.47 - 13µm |
| Crystal Structure | Tetragonal crystal system |
| Lattice constant | a=5.756Å,c=10.301 Å |
| Density | 4.48g/cm³ |
| Mohs hardness | 3.0 - 3.5 |
| Nonlinear coefficient d₃₆ [@10.6 μm, pm/V] | d₃₆ = 12.5 pm/V |
| Melting point | 993℃ |
| Absorption coefficient [@1.064 µm] | <0.05 cm⁻¹ @ 1.064 µm |
| Absorption coefficient [@10.6 µm] | <0.02 cm⁻¹ @ 10.6 µm |
| Negative uniaxial | nₒ>nₑ (nₑ>nₒ when λ<0.497µm) |
| Thermal conductivity | 1.0 W/M/℃ |
| SHG phase matching | 1.8-11.2 µm |
| Damage threshold [@10 ns, 1.064 um] | 30 MW/cm²(surface) |
| Coefficient of thermal expansion | ||C: -8.1 x 10⁻⁶ /℃ |
| Coefficient of thermal expansion | ⊥C: +19.8 x 10⁻⁶ /℃ |
| Thermo-optic coefficient | dnₒ/dt=15.4 x 10⁻⁵/℃ |
| Thermo-optic coefficient | dnₑ/dt=15.5 x 10⁻⁵/℃ |
| Sellmeier equation (λ in μm) T=20℃ | nₒ²=3.3970+2.3982λ²/( λ²– 0.09311) +2.1640 λ² /(λ²-950); |
| Sellmeier equation (λ in μm) T=20℃ | nₑ²=3.5873+1.9533λ²/(λ² – 0.11066) + 2.3391λ²/(λ²-1030.7) |
| Bandgap | 2.7eV |
| Birefringence [@0.53 µm] | 0.0231@0.53 µm |
| Birefringence [@0.694 µm] | 0.0504@0.694 µm |
| Birefringence [@1.06 µm] | 0.0542@1.06 µm |
| Birefringence [@5.3 µm] | 0.0533@5.3 µm |
| Birefringence [@10.6 µm] | 0.0542@10.6 µm |
| Orientation accuracy | <+-0.1° |
| Surface finish | 20/10 per MIL-O-13830A |
| Surface figure [@632.8nm for T>=1mm] | λ/8@632.8nm for T>=1mm |
| Optical-face tolerance | +0/-0.1mm |
| Length Tolerance | ±0.1mm |
| Parallelism | 30 ″ |
| Perpendicularity | 10′ |
| Edge bevel | <0.2mm×45° |
Key Features
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