Ultra thin BBO crystal wafer
BBO is a negative uniaxial crystal, with ordinary refractive index (No) larger than extraordinary refractive index (Ne). Both type I and type II phase matching can be reached by angle tuning. The phase matching angles of frequency doubling are shown in Fig. 2. Figure1. Transparency curve of BBO Figure2. SHG tuning curves of BBO The OPO and OPA of BBO are powerful tools for generating a widely tunable coherent radiation from UV to IR. The tuning angles of type I and type II BBO OPO and OPA have been calculated, with the results shown in Fig. 3 and Fig. 4, respectively. Figure 3. Type I OPO tuning curves of BBO Figure 4. Type II OPO tuning curves of BBO 1. OPO pumped at 532 nm An OPO output ranging from 680 nm to 2400 nm with the peak power of 1.6MW and up to 30% energy conversion efficiency was obtained in a 7.2 mm long type I BBO. The input pump energy was 40 mJ at 532 nm with pulse-width 75ps. With a longer crystal, higher conversion efficiency is expected. 2. OPO and OPA pumped at 355 nm In the case of Nd:YAG pumping, BBO's OPOs can generate more than 100mJ, with wavelength tunable from 400nm to 2000nm. Using XKPHO's BBO crystal, the OPO system covers a tuning range from 400nm to 3100nm which guarantees a maximum of 30% and more than 18% conversion efficiency, over the wavelength range from 430nm to 2000nm. Type II BBO can be used to decrease linewidth near the degenerate points. A linewidth as narrow as 0.05 nm and usable conversion efficiency of 12% were obtained. However, a longer (> 15mm) BBO should normally be used to decrease the oscillation threshold when employing the type II phase-matching scheme. Pumping with a picosecond Nd:YAG at 355 nm, a narrow-band (< 0.3 nm), high energy (> 200μJ) and wide tunable (400 nm to 2000 nm) pulse has been produced by BBO's OPAs. This OPA can reach as high as more than 50% conversion efficiency, and therefore is superior to common Dye lasers in many respects, including efficiency, tunable range, maintenance, and easiness in design and operation. Furthermore, coherent radiation from 205 nm to 3500 nm can be also generated by BBO's OPO or OPA plus a BBO for SHG. 3. Others A tunable OPO with signal wavelengths between 422nm and 477nm has been generated by angle tuning in a type ⅠBBO crystal pumped with a XeCl excimer laser at 308 nm. And a BBO's OPO pumped by the fourth harmonic of a Nd:YAG laser (at 266 nm) has been observed to cover the whole range of output wavelengths 330 nm - 1370 nm. When pumped by a 1mJ, 80 fs Dye laser at 615 nm, the OPA with two BBO crystals yields more than 50μJ (maximum 130 μJ), < 200 fs ultrashort pulse, over 800 nm - 2000 nm.
Overview
Specifications
| Parameter | Value |
|---|---|
| Crystal Structure | Trigonal,Space Group R3c |
| Lattice Parameter | a=b=12.532Å,c=12.717Å,Z=6 |
| Melting Point | About 1095℃ |
| Mohs Hardness | 4 |
| Density | 3.85 g/cm³ |
| Thermal Expansion Coefficients [α11 / α33, Associated Separately According to the Original Values] | α11=4 x 10-6/K; α33=36x 10-6/K |
| Thermal Conductivity Coefficients [⊥c / //c, Associated Separately According to the Original Values] | ⊥c: 1.2W/m/K; //c: 1.6W/m/K |
| Transparency Range | 190-3500nm |
| SHG Phase Matchable Range [Type I / Type II, Associated Separately According to the Original Values] | 409.6-3500nm (Type I) 525-3500nm (Type II) |
| Thermal-optic Coefficients dno/dT / dne/dT | dno/dT=-16.6x 10-6/℃ dne/dT=-9.3x 10-6/℃ |
| Absorption Coefficients [at 1064nm / at 532nm, Associated Separately According to the Original Values] | <0.1%/cm(at 1064nm) <1%/cm(at 532nm) |
| Angle Acceptance [θ, Type I, 1064 SHG / θ, Type II, 1064 SHG, Associated Separately According to the Original Values] | 0.8mrad·cm (θ, Type I, 1064 SHG) 1.27mrad·cm (θ, Type II, 1064 SHG) |
| Temperature Acceptance | 55℃·cm |
| Spectral Acceptance | 1.1nm·cm |
| Walk-off Angle [Type I 1064 SHG / Type II 1064 SHG, Associated Separately According to the Original Values] | 2.7° (Type I 1064 SHG) 3.2° (Type II 1064 SHG) |
| NLO Coefficients | deff(I)=d31sinθ+(d11cos3Φ- d22 sin3Φ) cosθq deff (II)= (d11 sin3Φ + d22 cos3Φ) cos2θ |
| Non-vanished NLO susceptibilities | d11 = 5.8 x d36(KDP) d31 = 0.05 x d11 d22 < 0.05 x d11 |
| Sellmeier Equations (λ in μm) | no2=2.7359+0.01878/(λ2-0.01822)-0.01354λ2 ne2=2.3753+0.01224/(λ2-0.01667)-0.01516λ2 |
| Electro-optic coefficients γ22 | γ22 = 2.7 pm/V |
| Half-wave voltage [at 1064 nm,3x3x20mm3] | 7 KV (at 1064 nm,3x3x20mm3) |
| Resistivity | >1011 ohm·cm |
| Relative Dielectric Constant | εs11 / εo : 6.7 εs33 / εo : 8.1 Tanδ<0.001 |
| Dimension tolerance [L≥2.5mm / L<2.5mm, Associated Separately According to the Original Values] | (W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L≥2.5mm) (W±0.1mm)x(H±0.1mm)x(L+0.1/-0.1mm) (L<2.5mm) |
| Clear aperture [central; of the diameter] | central 90% of the diameter |
| Flatness λ [@ 633nm] | less than λ/8 @ 633nm |
| Transmitting wavefront distortion λ [@ 633nm] | less than λ/8 @ 633nm |
| Chamfer [45°] | ≤0.2mm x 45° |
| Chip | ≤0.15mm |
| Scratch/Dig code [MIL-PRF-13830B] | better than 20/ 10 to MIL-PRF-13830B |
| Parallelism | ≤20 arc seconds |
| Perpendicularity | ≤5 arc minutes |
| Angle tolerance | ≤0.25 |
| Damage threshold [1064nm, TEM00, 10ns, 10HZ (polished only) / 1064nm, TEM00, 10ns, 10HZ (AR-coated) / 532nm, TEM00, 10ns, 10HZ (AR-coated), Associated Separately According to the Original Values] | >1 for 1064nm, TEM00, 10ns, 10HZ (polished only) >0.5 for 1064nm, TEM00, 10ns, 10HZ (AR-coated) >0.3 for 532nm, TEM00, 10ns, 10HZ (AR-coated) |
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