AgGaSe₂
AgGaSe₂ (silver gallium selenide), abbreviated AGSe, is a ternary compound semiconductor of the Ⅰ-Ⅲ-Ⅵ₂ group, with a chalcopyrite structure and point group 4-2m. It is a high-performance mid- and far-infrared nonlinear optical material transmitting infrared light from 0.73~21 μm. It has a large nonlinear coefficient (d₃₆=43×10⁻¹² m/V) and suitable birefringence, allowing phase matching for second harmonics in the 3~18 μm range. It is an effective crystal for mid-infrared laser frequency doubling and also performs well in three-wave nonlinear interactions (OPO). Its usable band is 0.9-16 μm. Pumping AgGaSe₂ with a 2.05 μm Ho:YLF laser produces a tunable 2.5-12 μm OPO source; a noncritically phase-matched OPO pumped by a tunable 1.4-1.55μm source produces tunable output at 1.9-5.5 μm.
Overview
Specifications
| Parameter | Value |
|---|---|
| Chemical formula | AgGaSe₂ |
| Crystal Structure | Tetragonal crystal system |
| Lattice parameters | a=5.9920Å,c=10.8803Å |
| Optical symmetry | Negative uniaxial (nₒ>nₑ,λ<804 nm nₑ>nₒ) |
| Density | 5.7g/cm³ |
| Mohs Hardness | 3-3.5 |
| Transparency range | 0.71-19μm |
| Sellmeier equation [@T=293 K(λ in μm)] | nₒ²=6.8507+0.4297/(λ²-0.1584)-0.00125λ²; |
| Sellmeier equation [@T=293 K(λ in μm)] | nₑ²=6.6792+0.4598/(λ²-0.2122)-0.00126λ² |
| Refractive Index [@10.5μm] | nₒ=2.5917,nₑ= 2.5585 |
| Thermal conductivity [@T=293 K] | 1 (||c) Wm⁻¹K⁻¹, 1,1 (⊥c) Wm⁻¹K⁻¹ |
| Laser Damage threshold [@10.6μm,150 ns] | >10MW/cm²@10.6μm,150 ns |
| Melting point | 851℃ |
| Bandgap | 1.83eV |
| Frequency-doubling coefficient | 33pm/V |
| Birefringence [@1.06μm] | 0.0246@1.06μm |
| Birefringence [@5.3μm] | 0.0317@5.3μm |
| Birefringence [@10.6μm] | 0.0332@10.6μm |
| Orientation accuracy | <±0.1° |
| Surface finish | 30/20 per MIL-O-13830A |
| Surface figure [@632.8nm for T>=1mm] | λ/8@632.8nm for T>=1mm |
| Optical-face tolerance | +0/-0.1mm |
| Length Tolerance | ±0.1mm |
| Parallelism | 30″ |
| Perpendicularity | 10′ |
| Edge bevel | <0.2mm×45° |
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