Specifications
| Parameter | Value |
|---|---|
| Dimension Tolerance | W(+/-0.1)*H(+/-0.1)*L(+0.5/-0.1)mm |
| Angle Tolerance | +/-0.25 ° |
| Perpendicularity | ≤10 ′ |
| Scratch/Dig | 20/10 |
| Chamfer [45°] | ≤0.2 mmx45 ° |
| Parallelism | ≤10 ″ |
| Chips | ≤0.1 mm |
| Flatness (λ) [633nm] | λ/10@633 nm |
| Clear Aperture | ≥90 % |
| Wavefront distortion (λ) [633nm] | λ/8@633 nm |
| Coatings | C1---AR@1342(<0.2 %)&671(R<0.5 %)nm C2---AR@1319(<0.2 %)&659.5(R<0.5 %)nm C3---AR@1064(<0.2 %)&532(R<0.5 %)nm C4---AR@946(R<0.2 %)&473(R<0.5 %)nm C5---AR@914(R<0.2 %)&457(R<0.5 %)nm C6---AR@800(R<0.2 %)&400(R<0.5 %)nm |
| Damage Threshold [1064nm, 10ns, 10Hz] | 500 MW/cm² (1064 nm, 10 ns, 10 Hz) |
| Crystal Structure | Monoclinic,Point group 2 |
| Lattice Parameter | a=7.116Å, b=4.993Å, c=6.508Å, β=105.62 ° ,Z=2 |
| Physical Axis | X//b,(Z,a)=31.6 °,(Y,c)=47.2 ° |
| Melting Point | 726 °C |
| Mohs Hardness | 5-5.5 |
| Density | 5.033 g/cm3 |
| Thermal Expansion coefficient | αa=4.8x10-5 /K, αb=4.4x10-6 /K, αc=-2.69x10-5 /K |
| Specific Heat [330 K] | 0.5 J/gm-K at 330 K |
| Optical Homogeneity | Dn~10-6/cm |
| Hygroscopisity | non |
| Transparency Range | 286-2500nm |
| Absorption Coefficient [1064nm] | <0.1 %/cm at 1064 nm |
| NLO coefficients | d12=d14=2.3, d25=d36=2.4, d11=2.53, |
| NLO coefficients | d13=-1.3, d35=-0.9, d26=2.8 |
| SHG 1064nm-Phase matching angle [SHG 1064nm; from z axis in YZ plane] | 168.9 ° from z axis in YZ plane |
| SHG 1064nm-Deff | 3.0+/-0.1 pm/V |
| SHG 1064nm-Angular acceptance | 2.32 arad-cm |
| SHG 1064nm-Walk-off angle | 25.6 mrad |
| SHG 1064nm-temperature acceptance | 2.17 °C-cm |
| Sellmeier Equations (λ in μm) | n12=3.6545+0.0511/(λ2-0.0371)-0.0226λ2 |
| Sellmeier Equations (λ in μm) | n22=3.0740+0.0323/(λ2-0.0316)-0.01337λ2 |
| Sellmeier Equations (λ in μm) | n32=3.1685+0.0373/(λ2-0.0346)-0.01750λ2 |
Applications
SHG and THG for middle and high power Nd: lasers at 1064nm;SHG and THG of high power Nd-lasers at 1342nm and 1319nm for red and blue lasers;SHG for the Nd- Lasers at 914nm and 946nm for blue laser;Optical Parametric Amplifiers (OPA) and Oscillators (OPO) application
Key Features
broad transparent range from 286nm to 2500nm;;large effective nonlinear coefficient;;high damage threshold;;Wide temperature bandwidth;Non hygroscopic
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Supplier Information
CRYSTECH Inc. was established in the beautiful coastal city of Qingdao in 2001. We take "serving the progress of laser technology and promoting the development of laser industry" as our mission, and engage in the Research and Development, Production, and Sales of laser crystals, Q-switches, Nonlinear optical crystals, Laser optical components, and related laser devices. It has now become a world’s leading manufacturer of core components for solid-state lasers. Our products are widely used in various fields such as medical and aesthetics lasers.
CRYSTECH has modern offices and production plants with a total area of more than 8000 square meters. We passed ISO9001 Quality Management System certification in 2006. The Quality Management System has been implemented in all departments from R&D to production, from pre-sales to after-sales, covering the whole processes from company management to customer satisfaction.
As a world-renowned laser components manufacturer, we provide one-stop solutions for core components of solid-state lasers. CRYSTECH’s main products cover eight categories: Laser crystals, Q- switches, Nonlinear crystals, 1535nm bonding crystals, Laser optical components, Laser modules, Laser cavities, and Laser handpieces. Among them, the most representative products include Alexandrite rods, Nd:YAG rods, RTP Q-Switch, KD*P Pockels Cells, KTP crystals, 1535nm bonding crystals, Cell Mirrors, Polarizers, 755nm long pulse laser module, Ceramic reflector and Dye Handpiece, etc.
CRYSTECH supports and serves customers, and creates value for them. We are willing to develop and progress together with our customers.
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