Er:Yb:YAl₃(BO₃)₄ crystal
Er:Yb:YAl₃(BO₃)₄ crystal: Currently, Er,Yb co-doped laser materials have the best overall performance in the 1.55 μm band.
Specification Snapshot
Crystal Structure
Trigonal system
Surface Quality [Complies with MIL-PRF-13830B]
10/5 (complies with MIL-PRF-13830B)
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Overview
Er:Yb:YAl₃(BO₃)₄ crystal: Currently, Er,Yb co-doped laser materials have the best overall performance in the 1.55 μm band.
Specifications
| Parameter | Value |
|---|---|
| Chemical Formula | Er:Yb:YAl₃(BO₃)₄ |
| Crystal Structure | Trigonal system |
| Atomic Density [1at.%Yb³⁺ or Er³⁺] | 0.55×10²⁰ cm⁻³ (1at.%Yb³⁺ or Er³⁺) |
| Mohs Hardness | 7.5 |
| Crystal density | 3.7 g/cm³ |
| Refractive Index (nₒ) [1550nm] | 1.75(nₒ) |
| Refractive Index (nₑ) [1550nm] | 1.68(nₑ) |
| Thermal Expansion Coefficient (298–573K) [298–573K;⊥c;25at.%Yb³⁺] | 2.0×10⁻⁶ K⁻¹ |
| Thermal Expansion Coefficient (298–573K) [298–573K;//c;25at.%Yb³⁺] | 9.7×10⁻⁶ K⁻¹ |
| Thermal Expansion Coefficient (298–573K) [298–573K;⊥c;10at.%Yb³⁺] | 1.2×10⁻⁶ K⁻¹ |
| Thermal Expansion Coefficient (298–573K) [298–573K;//c;10at.%Yb³⁺] | 8.5×10⁻⁶ K⁻¹ |
| Thermal Conductivity | 4.7 W·m⁻¹·K⁻¹ |
| Available dopant concentration range | 0.1–3at.%Er3⁺,5–30at.%Yb3⁺ |
| Crystal cross-section | (1×1) to (15×15) mm² |
| Crystal thickness | 0.5–10mm |
| Dimensional Tolerance | ±0.1 mm |
| Wavefront Distortion [@633nm] | ≤λ/8@633 nm |
| Surface Quality [Complies with MIL-PRF-13830B] | 10/5 (complies with MIL-PRF-13830B) |
| Flatness [@633nm] | ≤λ/6@633 nm |
| Parallel structure | Better than 10 arcseconds |
Applications
They can be applied in fields such as laser ranging, velocity measurement, 3D imaging, and target identification.
Key Features
Compared with Er,Yb co-doped phosphate glass, it can achieve continuous-wave laser operation with higher output power and higher slope efficiency. Lasers in the 1.55 μm band are eye-safe, lie within the atmospheric transmission window and the minimum-loss window of silica fiber, have a strong ability to penetrate smoke and haze, and match the detection-sensitive region of room-temperature germanium (Ge) and indium gallium arsenide (InGaAs) detectors.
Datasheet
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Supplier Information
MT-Optics, Inc., founded in 2011, is a professional manufacturer and exporter of photonic crystals and optical components. The company has about 150 employees and a factory area of 5,000 square meters. Its main products are exported to Europe and the United States. We have an experienced team of technical experts and engineers with more than 20 years of experience in the optics field, dedicated to producing reliable, high-quality products at highly competitive prices. We always adhere to the customer-first principle and strive to help customers develop successful applications. MT-Optics, Inc. continuously pursues technological innovation and possesses unique technology and production capabilities in manufacturing super-polished, ultra-thin, high-precision and high-quality optical components.
We have advanced processing equipment, including CNC plano milling machines, high-speed polishers, precision polishers, CNC grinding and polishing machines, IBF300 ion beam finishing machines, Optorun coating machines, ultrasonic cleaners, etc. In addition, we have advanced testing instruments, including Trioptics lens measurement systems, Hinds Instruments Exicor 150AT, Zygo interferometers, Cary 7000 spectrophotometers, Trioptics Prism Master 0.5-inch prism measurement systems, etc. These advanced equipments ensure that we can provide strong production capacity and high-quality products for OEM and custom products.
With close cooperation with global customers, MT-Optics, Inc. has won a good reputation and broad development opportunities. Fully understanding customer needs and truly solving their problems is the service philosophy of MT-Optics, Inc. MT-Optics, Inc. provides excellent service and technical support, offering customers one-stop solutions. We are committed to providing customers with high-quality products, highly competitive prices, on-time delivery and excellent service.
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