Si
Silicon (Si) windows made of optical-grade silicon are popular products for the 1.2-7 μm spectral range. Silicon has a very low density (half that of germanium or zinc selenide), making it ideal for weight-sensitive applications, especially in the 3-5 μm range. With a density of 2.329 g/cm3 and a Knoop hardness of 1150, it is harder and less prone to chipping than germanium.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Type I Undoped-Crystal Structure | Face-centered cubic |
| Type I Undoped-Melting Point | 1420℃ |
| Type I Undoped-Density | 2.4（g/cm^3） |
| Type I Undoped-Conductivity Type/Dopant | Type I undoped |
| Type I Undoped - Resistivity | >1000Ωcm |
| Type I Undoped-E P D | ≤100∕cm^2 |
| Type I Undoped-Oxygen Content | ≤1~1.8×101^8 |
| Type I Undoped - Carbon Content | ≤5×10^16 |
| P-Type B-Doped Crystal Structure | Face-centered cubic |
| P-Type B-Doped Melting Point | 1420℃ |
| P-Type B-Doped Density | 2.4（g/cm^3） |
| P-Type B-Doped Conductivity Type / Dopant | P-type, B-doped |
| P-Type B-Doped Resistivity | 10^-3~10^4Ωcm |
| P-Type B-Doped EPD | ≤100∕cm^2 |
| P-Type B-Doped Oxygen Content | ≤1~1.8×10^18 |
| P-Type B-Doped Carbon Content | ≤5×10^16 |
| N-Doped P - Crystal Structure | Face-centered cubic |
| N-Doped P - Melting Point | 1420℃ |
| N-Doped P - Density | 2.4（g/cm^3） |
| N-Doped P - Conductivity Type / Dopant | N-doped, P-type |
| N-Doped P - Resistivity | 10^-3~10^4Ωcm |
| N-Doped P - EPD | ≤100∕cm^2 |
| N-Doped P - Oxygen Content | ≤1~1.8×10^18 |
| N-Doped P - Carbon Content | ≤5×10^16 |
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Datasheet
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