Si
Silicon (Si) windows made of optical-grade silicon are popular products for the 1.2-7 μm spectral range. Silicon has a very low density (half that of germanium or zinc selenide), making it ideal for weight-sensitive applications, especially in the 3-5 μm range. With a density of 2.329 g/cm3 and a Knoop hardness of 1150, it is harder and less prone to chipping than germanium.
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Overview
Silicon (Si) windows made of optical-grade silicon are popular products for the 1.2-7 μm spectral range. Silicon has a very low density (half that of germanium or zinc selenide), making it ideal for weight-sensitive applications, especially in the 3-5 μm range. With a density of 2.329 g/cm3 and a Knoop hardness of 1150, it is harder and less prone to chipping than germanium.
Specifications
| Parameter | Value |
|---|---|
| Type I Undoped-Crystal Structure | Face-centered cubic |
| Type I Undoped-Melting Point | 1420℃ |
| Type I Undoped-Density | 2.4(g/cm^3) |
| Type I Undoped-Conductivity Type/Dopant | Type I undoped |
| Type I Undoped - Resistivity | >1000Ωcm |
| Type I Undoped-E P D | ≤100∕cm^2 |
| Type I Undoped-Oxygen Content | ≤1~1.8×101^8 |
| Type I Undoped - Carbon Content | ≤5×10^16 |
| P-Type B-Doped Crystal Structure | Face-centered cubic |
| P-Type B-Doped Melting Point | 1420℃ |
| P-Type B-Doped Density | 2.4(g/cm^3) |
| P-Type B-Doped Conductivity Type / Dopant | P-type, B-doped |
| P-Type B-Doped Resistivity | 10^-3~10^4Ωcm |
| P-Type B-Doped EPD | ≤100∕cm^2 |
| P-Type B-Doped Oxygen Content | ≤1~1.8×10^18 |
| P-Type B-Doped Carbon Content | ≤5×10^16 |
| N-Doped P - Crystal Structure | Face-centered cubic |
| N-Doped P - Melting Point | 1420℃ |
| N-Doped P - Density | 2.4(g/cm^3) |
| N-Doped P - Conductivity Type / Dopant | N-doped, P-type |
| N-Doped P - Resistivity | 10^-3~10^4Ωcm |
| N-Doped P - EPD | ≤100∕cm^2 |
| N-Doped P - Oxygen Content | ≤1~1.8×10^18 |
| N-Doped P - Carbon Content | ≤5×10^16 |
Applications
Windows and lenses for the 1.2-7 μm infrared spectral range; weight-sensitive applications in the 3-5 μm band
Datasheet
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Supplier Information
Fujian Zhongce Optoelectronics Co., Ltd. was established at the end of 2007. It is a high-tech certified enterprise specializing in the design, production, and sales of optical communication components. It has passed ISO9001-2015 international quality system, ISO14000-2004 international environmental management system, and GB/T29490-2013 intellectual property management system certifications. It is the first domestic enterprise mainly engaged in optical communication crystal component materials to be listed on the OTC exchange.
Zhongce Optoelectronics is dedicated to providing customers with full supply chain services including crystal blanks, optical cold processing, optical devices, and optical coatings. To date, the company has developed: C/G-lens, KTP wafers, TGG rods, PBS polarizing beam splitters, fiber collimators, lithium niobate (LiNbO3), yttrium vanadate (YVO4), quartz waveplates, optical isolator cores, optical isolators, optical circulator cores, and other cost-effective optical communication components and laser crystals. The company's optical isolator cores and in-line isolators fully leverage the design and processing advantages of its own optical components, maintaining an advanced level in product development and technological innovation. Experienced optical design and device packaging engineers can provide customers with various solutions.
The company actively undertakes external cooperation, establishes OEM strategic partnerships with domestic and international customers, and strives to become an excellent supplier for the optical communication industry and passive optical device manufacturers!
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