Blue-Enhanced Silicon PIN Photodiode Chip
A large-area blue-enhanced silicon PIN photodiode die supplied in chip-on-submount form. The circular photosensitive surface uses an anti-reflection/passivation coating that boosts sensitivity in the blue and near-UV bands while maintaining broadband response to the near infrared. A small centered top bond pad defines the front electrode, and the surrounding metallized carrier with orientation flats supports accurate pick-and-place, die attach and wire bonding in OEM detector assemblies.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Detector Type | Blue-Enhanced Si PIN Photodiode Chip |
| Chip Material | Si |
| Spectral Response Range | 350-1100nm |
| Peak Response Wavelength | 760nm |
| Peak Responsivity | 0.55A/W |
| Responsivity @450nm | ≥0.30A/W |
| Active Area Diameter | Ø5.0mm |
| Effective Active Area | 19.6mm² |
| Dark Current @10V | ≤5nA |
| Noise Equivalent Power (NEP) | ≤1.0×10⁻¹⁴W/√Hz |
| Junction Capacitance @10V | ≤60pF |
| Shunt Resistance @10mV | ≥100MΩ |
| Rise/Fall Time @10V, 50Ω | ≤10ns |
| Reverse breakdown Voltage | ≥50V |
| Maximum Reverse Bias Voltage | 30V |
| Operating Mode | Photovoltaic / Photoconductive |
| Electrode Configuration | Top center bond pad (anode), backside metallization (cathode) |
| Carrier/Submount | Metallized submount with orientation flats |
| Operating Temperature Range | -40-+100°C |
| Storage Temperature Range | -55-+125°C |
Applications
Key Features
Datasheet
Supplier Information
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