Diode Laser System for Laser Wafer Annealing - DLight®S Series
The DLight®S Series diode laser system is designed for high-precision laser wafer annealing applications, offering modular design, high power density, and narrow beam width for consistent performance.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Operation Mode | CW |
| Max Output Power | 1500W |
| Standard Output Power | 1050W |
| Wavelength Tolerance | ±5nm |
| Beam Length: Top-hat Area | 11.5±0.5mm |
| Beam Length: Beam Profile | Top hat |
| Beam Length: Uniformity | ≥95% |
| Beam Width: FWHM | 70±5μm |
| Beam Width: Beam Profile | Gaussian |
| Beam Width: Stability | ≤1μm |
| Impact Resistance | ≥1g |
| Laser System Motion Velocity: Working Surface | ≤500mm/s |
| Laser System Motion Velocity: Focus Axis | ≤10mm/s |
| Operating Temperature | 25°C |
| DI Water Quality | 2-5μS/cm |
| Dimensions (Height × Width × Depth) | 480×155×192mm |
| System Configuration | Power Supply/Controller/Cooling System |
Applications
Key Features
Datasheet
Supplier Information
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Processing size range: 2 inch / 4 inch / 6 inch (8 inch and above products require customization) Applicable chip size: 3*5 mil~150*150 mil (other sizes can be verified together) Appearance yield: ≥99 %
Unattended fully automatic operation;; Automatic recipe file retrieval by scanning code;; Intelligent contour processing for broken wafers;; Automatic calibration function for continuous processing;; Foreign object detection function for material sheets;; Gripper anti-collision function;; Blade wear monitoring and warning function;; LED, semiconductor wafer splitting (SiC, Si, GaN, sapphire and other brittle materials);; Substrate splitting in other industries (ceramics, glass and other brittle materials)
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