Diode Laser System for Laser Wafer Annealing - DLight®S Series
The DLight®S Series diode laser system is designed for high-precision laser wafer annealing applications, offering modular design, high power density, and narrow beam width for consistent performance.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Operation Mode | CW |
| Max Output Power | 1500W |
| Standard Output Power | 1050W |
| Power Stability | ±2% |
| Wavelength | 808nm |
| Wavelength Tolerance | ±5nm |
| Beam Length: Top-hat Area | 11.5±0.5mm |
| Beam Length: Beam Profile | Top hat |
| Beam Length: Uniformity | ≥95% |
| Beam Width: FWHM | 70±5μm |
| Beam Width: Beam Profile | Gaussian |
| Beam Width: Stability | ≤1μm |
| Working Distance | 45-50mm |
| Depth of Focus | ±80μm |
| Operating Current | ≤100A |
| Operating Voltage | ≤40V |
| Impact Resistance | ≥1g |
| Laser System Motion Velocity: Working Surface | ≤500mm/s |
| Laser System Motion Velocity: Focus Axis | ≤10mm/s |
| Operating Temperature | 25°C |
| Storage Temperature | 5-45°C |
| Cooling Method | DI Water Cooling |
| DI Water Quality | 2-5μS/cm |
| Dimensions (Height × Width × Depth) | 480×155×192mm |
| System Configuration | Power Supply/Controller/Cooling System |
| Optional Configuration | Pyrometer/Beam Quality Analysis System/Power Meter |
Applications
Key Features
Datasheet
Supplier Information
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