Gallium Arsenide Epitaxial LED
Epitaxial P/N/MQW Layers on GaAs,Primarily IR/NIR Emission700–1100nm.
Specification Snapshot
GaAs Red LED Epitaxy (2~6 Inches) - Substrate Diameter
2 inch - 50.8mm
GaAs Red LED Epitaxy (2~6 Inches) - Substrate Diameter
4 inch - 100mm
GaAs Red LED Epitaxy (2~6 Inches) - Substrate Diameter
6 inch - 150mm
GaAs Red LED Epitaxy (2~6 Inches) - GaAs Substrate Thickness [Substrate diameter: 2 inch - 50.8mm]
350μm
GaAs Red LED Epitaxy (2~6 Inches) - GaAs Substrate Thickness [Substrate diameter: 4 inch - 100mm]
1000μm
GaAs Red LED Epitaxy (2~6 Inches) - GaAs Substrate Thickness [Substrate diameter: 6 inch - 150mm]
1000μm
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Overview
Epitaxial P/N/MQW Layers on GaAs,Primarily IR/NIR Emission700–1100nm.
Specifications
| Parameter | Value |
|---|---|
| GaAs Red LED Epitaxy (2~6 Inches) - Substrate Diameter | 2 inch - 50.8mm |
| GaAs Red LED Epitaxy (2~6 Inches) - Substrate Diameter | 4 inch - 100mm |
| GaAs Red LED Epitaxy (2~6 Inches) - Substrate Diameter | 6 inch - 150mm |
| GaAs Red LED Epitaxy (2~6 Inches) - GaAs Substrate Thickness [Substrate diameter: 2 inch - 50.8mm] | 350μm |
| GaAs Red LED Epitaxy (2~6 Inches) - GaAs Substrate Thickness [Substrate diameter: 4 inch - 100mm] | 1000μm |
| GaAs Red LED Epitaxy (2~6 Inches) - GaAs Substrate Thickness [Substrate diameter: 6 inch - 150mm] | 1000μm |
| Gallium Arsenide Red LED Epitaxy (2~6 Inches) - Gallium Arsenide Substrate Surface | Polished/Etched |
| Gallium Arsenide Red LED Epitaxy (2~6 Inches) - Gallium Arsenide Substrate Crystal Orientation | (100) 15°Off Toward <111> ±0.5° |
| Gallium Arsenide Red LED Epitaxy (2~6 Inches) - Gallium Arsenide Substrate Model | N-Si |
| Gallium Arsenide Red LED Epitaxy (2~6 Inches) - Epitaxial Emission Type | Red LED Light |
| Gallium Arsenide Red LED Epitaxy (2~6 Inches) - Emission Wavelength | 570-655nm |
Applications
IR LEDs for Remotes/Communication/Night Vision;Fiber Communication Light Sources;Proximity/Photoelectric Sensors;IR Lighting/Medical Detection
Datasheet
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Supplier Information
Jiangyin Jingmu Optoelectronic New Materials Co., Ltd. is a technology-oriented enterprise dedicated to semiconductor wafer material processing and epitaxial technology. With a decade of focus on semiconductor substrates, including SiC, sapphire, silicon, and third/fourth-generation materials like diamond, GaN, Ga2O3, AlN, it also provides optical wafers and carrier products. Equipped with advanced processing technologies such as cutting, grinding, polishing, laser processing, epitaxial coating, and wafer bonding, it collaborates with universities for R&D, offering customized solutions. Products are widely used in LED, power devices, RF, and optical communication.
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