Gallium Arsenide Epitaxial LED

Gallium Arsenide Epitaxial LED

Supplier
Jmwafer
Category
Light-Emitting Diodes (LEDs)
Origin
China

Epitaxial P/N/MQW Layers on GaAs,Primarily IR/NIR Emission700–1100nm.

Specification Snapshot
GaAs Red LED Epitaxy (2~6 Inches) - Substrate Diameter
2 inch - 50.8mm
GaAs Red LED Epitaxy (2~6 Inches) - Substrate Diameter
4 inch - 100mm
GaAs Red LED Epitaxy (2~6 Inches) - Substrate Diameter
6 inch - 150mm
GaAs Red LED Epitaxy (2~6 Inches) - GaAs Substrate Thickness [Substrate diameter: 2 inch - 50.8mm]
350μm
GaAs Red LED Epitaxy (2~6 Inches) - GaAs Substrate Thickness [Substrate diameter: 4 inch - 100mm]
1000μm
GaAs Red LED Epitaxy (2~6 Inches) - GaAs Substrate Thickness [Substrate diameter: 6 inch - 150mm]
1000μm
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Overview

Epitaxial P/N/MQW Layers on GaAs,Primarily IR/NIR Emission700–1100nm.

Specifications

ParameterValue
GaAs Red LED Epitaxy (2~6 Inches) - Substrate Diameter2 inch - 50.8mm
GaAs Red LED Epitaxy (2~6 Inches) - Substrate Diameter4 inch - 100mm
GaAs Red LED Epitaxy (2~6 Inches) - Substrate Diameter6 inch - 150mm
GaAs Red LED Epitaxy (2~6 Inches) - GaAs Substrate Thickness [Substrate diameter: 2 inch - 50.8mm]350μm
GaAs Red LED Epitaxy (2~6 Inches) - GaAs Substrate Thickness [Substrate diameter: 4 inch - 100mm]1000μm
GaAs Red LED Epitaxy (2~6 Inches) - GaAs Substrate Thickness [Substrate diameter: 6 inch - 150mm]1000μm
Gallium Arsenide Red LED Epitaxy (2~6 Inches) - Gallium Arsenide Substrate SurfacePolished/Etched
Gallium Arsenide Red LED Epitaxy (2~6 Inches) - Gallium Arsenide Substrate Crystal Orientation(100) 15°Off Toward <111> ±0.5°
Gallium Arsenide Red LED Epitaxy (2~6 Inches) - Gallium Arsenide Substrate ModelN-Si
Gallium Arsenide Red LED Epitaxy (2~6 Inches) - Epitaxial Emission TypeRed LED Light
Gallium Arsenide Red LED Epitaxy (2~6 Inches) - Emission Wavelength570-655nm

Applications

IR LEDs for Remotes/Communication/Night Vision;Fiber Communication Light Sources;Proximity/Photoelectric Sensors;IR Lighting/Medical Detection

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Supplier Information

Jm
Jmwafer
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Jiangyin Jingmu Optoelectronic New Materials Co., Ltd. is a technology-oriented enterprise dedicated to semiconductor wafer material processing and epitaxial technology. With a decade of focus on semiconductor substrates, including SiC, sapphire, silicon, and third/fourth-generation materials like diamond, GaN, Ga2O3, AlN, it also provides optical wafers and carrier products. Equipped with advanced processing technologies such as cutting, grinding, polishing, laser processing, epitaxial coating, and wafer bonding, it collaborates with universities for R&D, offering customized solutions. Products are widely used in LED, power devices, RF, and optical communication.

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Gallium Arsenide Epitaxial LED
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