Silicon-Based GaN Epitaxial LED

Silicon-Based GaN Epitaxial LED

Supplier
Jmwafer
Category
Light-Emitting Diodes (LEDs)
Origin
China

GaN-on-Si LED Epitaxy Combines Efficient GaN Emission/Low-Cost Silicon for LED Chips,Important Research Direction.

Specification Snapshot
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter
50.8mm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter
100mm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter
150mm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter
200mm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Silicon Substrate Thickness [Substrate diameter: 50.8mm]
1000μm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Silicon Substrate Thickness [Substrate diameter: 100mm]
1000μm
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Overview

GaN-on-Si LED Epitaxy Combines Efficient GaN Emission/Low-Cost Silicon for LED Chips,Important Research Direction.

Specifications

ParameterValue
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter50.8mm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter100mm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter150mm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter200mm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Silicon Substrate Thickness [Substrate diameter: 50.8mm]1000μm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Silicon Substrate Thickness [Substrate diameter: 100mm]1000μm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Silicon Substrate Thickness [Substrate diameter: 150mm]1000μm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Silicon Substrate Thickness [Substrate diameter: 200mm]1150μm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Silicon Substrate SurfacePolished/Etched
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Silicon Substrate Crystal OrientationP(111)
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Epitaxial Emission Type [Substrate diameter: 50.8mm]Green LED
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Epitaxial Emission Type [Substrate diameter: 100mm]Blue LED
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Epitaxial Emission Type [Substrate diameter: 150mm]Violet LED
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Emission Wavelength [Epitaxial Emission Type: Green LED; Substrate Diameter: 50.8mm]520-530nm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Emission Wavelength [Epitaxial Emission Type: Blue LED; Substrate Diameter: 100mm]450-460nm
Silicon-Based GaN LED Epitaxy (2~8 Inches) - Emission Wavelength [Epitaxial Emission Type: Violet LED; Substrate Diameter: 150mm]410-420nm

Applications

Conventional LEDs:General Indoor/Outdoor/Automotive Lighting and TV/Monitor Backlights;Mini-LED:Backlights for High-End TVs,Monitors,Tablets;Micro-LED:Next-Generation AR/VR,Smartwatch and Large HD Displays

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Supplier Information

Jm
Jmwafer
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Jiangyin Jingmu Optoelectronic New Materials Co., Ltd. is a technology-oriented enterprise dedicated to semiconductor wafer material processing and epitaxial technology. With a decade of focus on semiconductor substrates, including SiC, sapphire, silicon, and third/fourth-generation materials like diamond, GaN, Ga2O3, AlN, it also provides optical wafers and carrier products. Equipped with advanced processing technologies such as cutting, grinding, polishing, laser processing, epitaxial coating, and wafer bonding, it collaborates with universities for R&D, offering customized solutions. Products are widely used in LED, power devices, RF, and optical communication.

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