Sapphire-Based GaN Epitaxial LED

Sapphire-Based GaN Epitaxial LED

Supplier
Jmwafer
Category
Light-Emitting Diodes (LEDs)
Origin
China

Sapphire-Based Epitaxial GaN LED Is a Light-Emitting Diode with GaN Grown on Sapphire.

Specification Snapshot
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter
50.8 mm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter
100mm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter
150mm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter
200mm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Thickness [Substrate Diameter: 50.8 mm]
430μm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Thickness [Substrate diameter: 100mm]
650μm
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Overview

Sapphire-Based Epitaxial GaN LED Is a Light-Emitting Diode with GaN Grown on Sapphire.

Specifications

ParameterValue
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter50.8 mm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter100mm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter150mm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter200mm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Thickness [Substrate Diameter: 50.8 mm]430μm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Thickness [Substrate diameter: 100mm]650μm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Thickness [Substrate diameter: 150mm]1000μm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Thickness [Substrate diameter: 200mm]1600μm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Surface [Substrate Diameter: 50.8 mm]FSS/PSS/NPSS
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Surface [Substrate diameter: 100mm]FSS/PSS/NPSS
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Surface [Substrate diameter: 150mm]FSS/PSS/NPSS
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Surface [Substrate diameter: 200mm]FSS/PSS/NPSS
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Crystal OrientationC-Plane
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Epitaxial Emission Type [Substrate Diameter: 50.8 mm]Green LED
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Epitaxial Emission Type [Substrate diameter: 100mm]Blue LED
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Epitaxial Emission Type [Substrate diameter: 150mm]Violet LED
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Epitaxial Emission Type [Substrate diameter: 200mm]UVC Deep Ultraviolet
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Emission Wavelength [Epitaxial Emission Type: Green LED; Substrate Diameter: 50.8 mm]520-530nm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Emission Wavelength [Epitaxial Emission Type: Blue LED; Substrate Diameter: 100mm]450-460nm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Emission Wavelength [Epitaxial Emission Type: Violet LED; Substrate Diameter: 150mm]410-420nm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Emission Wavelength [Epitaxial Emission Type: UVC Deep UV; Substrate Diameter: 200mm]100-280nm

Applications

Conventional LEDs:Residential/Industrial Lighting,Display Backlights,Automotive Lighting,Signal Lights,etc.;Mini-LED:High-End Displays,Automotive Displays,Gaming Monitors;Micro-LED:AR/VR,Smartwatches,Ultralarge TVs,Smartwatches,Fitness Trackers,etc.

Datasheet

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Supplier Information

Jm
Jmwafer
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Jiangyin Jingmu Optoelectronic New Materials Co., Ltd. is a technology-oriented enterprise dedicated to semiconductor wafer material processing and epitaxial technology. With a decade of focus on semiconductor substrates, including SiC, sapphire, silicon, and third/fourth-generation materials like diamond, GaN, Ga2O3, AlN, it also provides optical wafers and carrier products. Equipped with advanced processing technologies such as cutting, grinding, polishing, laser processing, epitaxial coating, and wafer bonding, it collaborates with universities for R&D, offering customized solutions. Products are widely used in LED, power devices, RF, and optical communication.

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