Sapphire-Based GaN Epitaxial LED
Sapphire-Based Epitaxial GaN LED Is a Light-Emitting Diode with GaN Grown on Sapphire.
Specification Snapshot
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter
50.8 mm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter
100mm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter
150mm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter
200mm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Thickness [Substrate Diameter: 50.8 mm]
430μm
Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Thickness [Substrate diameter: 100mm]
650μm
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Overview
Sapphire-Based Epitaxial GaN LED Is a Light-Emitting Diode with GaN Grown on Sapphire.
Specifications
| Parameter | Value |
|---|---|
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter | 50.8 mm |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter | 100mm |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter | 150mm |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Substrate Diameter | 200mm |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Thickness [Substrate Diameter: 50.8 mm] | 430μm |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Thickness [Substrate diameter: 100mm] | 650μm |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Thickness [Substrate diameter: 150mm] | 1000μm |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Thickness [Substrate diameter: 200mm] | 1600μm |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Surface [Substrate Diameter: 50.8 mm] | FSS/PSS/NPSS |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Surface [Substrate diameter: 100mm] | FSS/PSS/NPSS |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Surface [Substrate diameter: 150mm] | FSS/PSS/NPSS |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Surface [Substrate diameter: 200mm] | FSS/PSS/NPSS |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Sapphire Substrate Crystal Orientation | C-Plane |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Epitaxial Emission Type [Substrate Diameter: 50.8 mm] | Green LED |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Epitaxial Emission Type [Substrate diameter: 100mm] | Blue LED |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Epitaxial Emission Type [Substrate diameter: 150mm] | Violet LED |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Epitaxial Emission Type [Substrate diameter: 200mm] | UVC Deep Ultraviolet |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Emission Wavelength [Epitaxial Emission Type: Green LED; Substrate Diameter: 50.8 mm] | 520-530nm |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Emission Wavelength [Epitaxial Emission Type: Blue LED; Substrate Diameter: 100mm] | 450-460nm |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Emission Wavelength [Epitaxial Emission Type: Violet LED; Substrate Diameter: 150mm] | 410-420nm |
| Sapphire-Based GaN LED Epitaxy (2~8 Inches) - Emission Wavelength [Epitaxial Emission Type: UVC Deep UV; Substrate Diameter: 200mm] | 100-280nm |
Applications
Conventional LEDs:Residential/Industrial Lighting,Display Backlights,Automotive Lighting,Signal Lights,etc.;Mini-LED:High-End Displays,Automotive Displays,Gaming Monitors;Micro-LED:AR/VR,Smartwatches,Ultralarge TVs,Smartwatches,Fitness Trackers,etc.
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Supplier Information
Jiangyin Jingmu Optoelectronic New Materials Co., Ltd. is a technology-oriented enterprise dedicated to semiconductor wafer material processing and epitaxial technology. With a decade of focus on semiconductor substrates, including SiC, sapphire, silicon, and third/fourth-generation materials like diamond, GaN, Ga2O3, AlN, it also provides optical wafers and carrier products. Equipped with advanced processing technologies such as cutting, grinding, polishing, laser processing, epitaxial coating, and wafer bonding, it collaborates with universities for R&D, offering customized solutions. Products are widely used in LED, power devices, RF, and optical communication.
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