Silicon-Carbide-Based GaN Epitaxial HEMT
GaN-on-SiC HEMT Epitaxy Combines GaN High-Frequency/Power with SiC Thermal Conductivity by Growing GaN Films on SiC.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Silicon-Carbide-Based GaN HEMT Epitaxial Substrate (2~6 Inches) - Substrate Diameter | 2 inch - 50.8mm |
| Silicon-Carbide-Based GaN HEMT Epitaxial Substrate (2~6 Inches) - Substrate Diameter | 4 inch - 100mm |
| Silicon-Carbide-Based GaN HEMT Epitaxial Substrate (2~6 Inches) - Substrate Diameter | 6 inch - 150mm |
| Silicon-Carbide-Based GaN HEMT Epitaxial Substrate (2~6 Inches) - Silicon Carbide Substrate Thickness [Substrate diameter: 2 inch - 50.8mm] | 500μm |
| Silicon-Carbide-Based GaN HEMT Epitaxial Substrate (2~6 Inches) - Silicon Carbide Substrate Thickness [Substrate diameter: 4 inch - 100mm] | 500μm |
| Silicon-Carbide-Based GaN HEMT Epitaxial Substrate (2~6 Inches) - Silicon Carbide Substrate Thickness [Substrate diameter: 6 inch - 150mm] | 500μm |
| Silicon-Carbide-Based GaN HEMT Epitaxial Substrate (2~6 Inches) - Silicon Carbide Substrate Crystal Orientation | {0001} |
| Silicon-Carbide-Based GaN HEMT Epitaxial Substrate (2~6 Inches) - Silicon Carbide Substrate Resistivity | ≥1E7 Ω·cm |
Applications
Datasheet
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