Fluorophlogopite
Synthetic Fluorophlogopite Mica KMg3(AlSi3O10)F2,Melts1375℃/Long-Term up to1100℃,Colorless Transparent,Strong Acid-Alkali Inert,Stable/Pure/Complete Structure/Flat Cleavage,Easily Split Thin.
Specification Snapshot
Fluoromica Substrate - Dimensions
5 mm × 5 mm
Fluoromica Substrate - Dimensions
10 mm × 10 mm
Fluoromica Substrate - Dimensions
20 mm × 20 mm
Fluoromica Substrate - Dimensions
50 mm × 50 mm
Fluoromica Substrate - Dimensions
50.8mm
Fluoromica Substrate - Thickness
0.2mm
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Overview
Synthetic Fluorophlogopite Mica KMg3(AlSi3O10)F2,Melts1375℃/Long-Term up to1100℃,Colorless Transparent,Strong Acid-Alkali Inert,Stable/Pure/Complete Structure/Flat Cleavage,Easily Split Thin.
Specifications
| Parameter | Value |
|---|---|
| Fluoromica Substrate - Dimensions | 5 mm × 5 mm |
| Fluoromica Substrate - Dimensions | 10 mm × 10 mm |
| Fluoromica Substrate - Dimensions | 20 mm × 20 mm |
| Fluoromica Substrate - Dimensions | 50 mm × 50 mm |
| Fluoromica Substrate - Dimensions | 50.8mm |
| Fluoromica Substrate - Thickness | 0.2mm |
| Fluorophlogopite Mica Substrate - Main Surface Crystal Orientation | <001> |
| Fluorophlogopite Mica Substrate - Surface Condition | Double-Side Polished |
| Fluoromica Substrate - Roughness | <0.2nm |
| Density | 2.78 ~ 2.85 ×10³ Kg/m³ |
| Bulk Resistivity | 10¹⁵ ~ 10¹⁶ Ω·cm |
| Electrical Breakdown Strength (Dielectric Strength) | 185 ~ 238 kV/mm |
| Melting Point | 1375±5 ℃ |
| Maximum Use Temperature | 1100 ℃ |
| Thermogravimetric Weight Loss (40 ~ 1180℃) | 0.85% |
| Specific Heat Capacity | 836 J/kg·K |
| Linear Thermal Expansion Coefficient | (∥)10 ~ 12 ×10⁻⁶/K; (⊥)15 ~ 25 ×10⁻⁶/K |
| Thermal Conductivity | (∥)3.75 W/m·K; (⊥)0.55 W/m·K |
| Optical-Axis Angle | 8° ~ 14° |
| Refractive Index | nₚ:1.513 ~ 1.544; nₘ:1.539 ~ 1.564; n₉:1.540 ~ 1.566 |
| Hardness | Mohs Hardness 3~3.4; Microhardness Hv0.2: 1.35 GPa; S: 138~146 |
| Tensile Strength | 150 ~ 200 MPa |
| Compressive Strength | 400 ~ 520 MPa |
Applications
Widely Used as 2D Nanomaterial Growth Substrates, in Optics and as Aerospace Equipment Insulating Sheets, etc.
Key Features
Other Dimensions and Parameters Customizable
Datasheet
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Supplier Information
Jiangyin Jingmu Optoelectronic New Materials Co., Ltd. is a technology-oriented enterprise dedicated to semiconductor wafer material processing and epitaxial technology. With a decade of focus on semiconductor substrates, including SiC, sapphire, silicon, and third/fourth-generation materials like diamond, GaN, Ga2O3, AlN, it also provides optical wafers and carrier products. Equipped with advanced processing technologies such as cutting, grinding, polishing, laser processing, epitaxial coating, and wafer bonding, it collaborates with universities for R&D, offering customized solutions. Products are widely used in LED, power devices, RF, and optical communication.
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