Indium Antimonide InSb
InSb III-V,Very Narrow Gap/Low Effective Electron Mass/High Mobility for Magnetoresistance/Hall Devices;High3–5μm QE/Responsivity,Preferred MWIR Detector Material.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Crystal Orientation [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 2″] | (111) A or B ±0.1° Crystal Orientation; (100) Also Available at Any Angle off the (100) Growth Plane |
| Diameter [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 2″] | 50.5±0.5 |
| Plane Angle [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 2″] | 2 Flats at 120° |
| Angular Tolerance [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 2″] | ±0.1 ° |
| Major-Side Length [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 2″] | 16±2 |
| Minor-Side Length [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 2″] | 8±1 |
| Thickness [Crystal2″,Not Model;Custom Wafer;800 or900±25 Tolerance Allocation Not Guessed;Size2″] | 625±25 |
| Doping [Source Crystal Size 2″, Not Product Model; Custom Wafer Dimensions; Electrical/Doping Specifications; Size 2″] | Te-Doped |
| Conductivity Type [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 2″] | n-Type |
| Carrier Concentration [Source Crystal Size 2″, Not Product Model; Wafer Dimensions Customizable; 77K; Size Specification 2″] | 4×10¹⁴~1.4×10¹⁵ |
| Electron Mobility [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 2″] | ≥1×10⁶ |
| Dislocation Density [Crystal2″,Not Model;Custom Wafer;Electrical Table Explicitly Common2″/3″;Stricter Electrical Specs on Request;Size2″] | ≤50 cm⁻² |
| TTV [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Polished/Etched; Size Specification 2″] | <10 μm |
| Bow [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Polished/Etched; Size Specification 2″] | <10 μm |
| Warp [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Polished/Etched; Size Specification 2″] | <15 μm |
| TTV [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Polished/Polished; Size Specification 2″] | <5 μm |
| Bow [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Polished/Polished; Size Specification 2″] | <5 μm |
| Warp [Original Crystal Size Specification 2″; Not a Product Model; Wafer Size Customizable on Request; Polished/Polished; Size Specification 2″] | <8 μm |
| Crystal Orientation [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 3″] | (111) A or B ±0.1° Crystal Orientation; (100) Also Available at Any Angle off the (100) Growth Plane |
| Diameter [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 3″] | 76.2±0.4 |
| Plane Angle [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 3″] | 2 Flats at 120° |
| Angular Tolerance [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 3″] | ±0.1 ° |
| Major-Side Length [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 3″] | 22±2 |
| Minor-Side Length [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 3″] | 11±1 |
| Thickness [Crystal3″,Not Model;Custom Wafer;800 or900±25 Tolerance Allocation Not Guessed;Size3″] | 800 or 900±25 |
| Doping [Source Crystal Size 3″, Not Product Model; Custom Wafer Dimensions; Electrical/Doping Specifications; Size 3″] | Te-Doped |
| Conductivity Type [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 3″] | n-Type |
| Carrier Concentration [Source Crystal Size 3″, Not Product Model; Wafer Dimensions Customizable; 77K; Size Specification 3″] | 4×10¹⁴~1.4×10¹⁵ |
| Electron Mobility [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Size Specification 3″] | ≥1×10⁶ |
| Dislocation Density [Crystal3″,Not Model;Custom Wafer;Electrical Table Explicitly Common2″/3″;Stricter Electrical Specs on Request;Size3″] | ≤50 cm⁻² |
| TTV [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Polished/Etched; Size Specification 3″] | <10 μm |
| Bow [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Polished/Etched; Size Specification 3″] | <10 μm |
| Warp [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Polished/Etched; Size Specification 3″] | <15 μm |
| TTV [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Polished/Polished; Size Specification 3″] | <5 μm |
| Bow [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Polished/Polished; Size Specification 3″] | <5 μm |
| Warp [Original Crystal Size Specification 3″; Not a Product Model; Wafer Size Customizable on Request; Polished/Polished; Size Specification 3″] | <8 μm |
Applications
Datasheet
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