NL6610
NL6610 Red LED in Transparent Epoxy/TO-18 Metal Stem. Defined Spot/Precise Path,Consistent Collimation/Emission Angles for Easy Coupling/Shaping,Long-Term Stability/Reliability,Heatsink/Low Light Decay,for Precision Instruments,Encoders,Industrial Sensors.
Specification Snapshot
Power Consumption P_D [Maximum Ratings;Ta=25°C]
100 mW
Forward Current I_F [Maximum Ratings;Ta=25°C]
50 mA
Operating Temperature Topr. [Maximum Ratings;Ta=25°C]
-20~+85 °C
Storage Temperature Tstg. [Maximum Ratings;Ta=25°C]
-30~+100 °C
Forward Voltage Drop V_F [Electro-optical characteristics;Ta=25°C;I_F=20mA]
min:1.85 V; typical:2.10 V; max:2.40 V
Peak Wavelength λ_P [Electro-optical characteristics;Ta=25°C;I_F=20mA]
typical:660 nm
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Overview
NL6610 Red LED in Transparent Epoxy/TO-18 Metal Stem.
Defined Spot/Precise Path,Consistent Collimation/Emission Angles for Easy Coupling/Shaping,Long-Term Stability/Reliability,Heatsink/Low Light Decay,for Precision Instruments,Encoders,Industrial Sensors.
Specifications
| Parameter | Value |
|---|---|
| Power Consumption P_D [Maximum Ratings;Ta=25°C] | 100 mW |
| Forward Current I_F [Maximum Ratings;Ta=25°C] | 50 mA |
| Peak Current I_FP [Maximum Ratings; Ta=25°C; Pulse Width tw≤100μs; Period T=10ms] | 0.5 A |
| Reverse Voltage V_R [Maximum Ratings;Ta=25°C] | 5 V |
| Operating Temperature Topr. [Maximum Ratings;Ta=25°C] | -20~+85 °C |
| Storage Temperature Tstg. [Maximum Ratings;Ta=25°C] | -30~+100 °C |
| Soldering Temperature Tsol. [Maximum Ratings; Ta=25°C; 3mm from the Cap for No More Than 5 Seconds] | 260 °C |
| Forward Voltage Drop V_F [Electro-optical characteristics;Ta=25°C;I_F=20mA] | min:1.85 V; typical:2.10 V; max:2.40 V |
| Reverse Current I_R [Electro-optical characteristics;Ta=25°C;V_R=5V] | max:10 μA |
| Luminous Intensity Po [Electro-optical characteristics;Ta=25°C;I_F=50mA] | min:10 mW |
| Peak Wavelength λ_P [Electro-optical characteristics;Ta=25°C;I_F=20mA] | typical:660 nm |
| Half-Width Δλ [Electro-optical characteristics;Ta=25°C;I_F=20mA] | typical:±50 nm |
| Half-Value Angle Δθ [Electro-optical characteristics;Ta=25°C;I_F=20mA] | typical:±40 deg |
| Description [Parameter image_01 independent metal-can package model selection table; NL6610] | TO CAN Type |
| Dimensions [Parameter image_01 independent-model selection table; NL6610] | Φ4.2×(2+1.5) |
| Emission Wavelength [Parameter image_01 independent-model selection table; NL6610] | 660 nm |
Applications
Industrial Application
Key Features
Peak660nm;High Output;Broad Applicability / High Availability
Custom Light Sources for Special Applications;Custom VCSEL Emitters(NL-Vxx Series),Laser Diodes(NL-Lxx Series),UV LEDs,RGB Sources for Color Sensors and Special Source Arrays
Datasheet
Product Datasheet
PDF
Supplier Information
Shanghai Enbi Technology Co., Ltd., founded in 2016, focuses on optoelectronic technology R&D and production. Based on optoelectronic semiconductor discrete devices, it integrates optics, MEMS, electronics, microelectronics, semiconductor optoelectronic IC technologies, covering components, optoelectronic ICs, sensor modules, with full capability from chip design to module mass production, holding independent IP and unique testing systems. The company has an excellent management team and skilled staff, rich industry experience, strong R&D, efficient mass production and strict quality control, providing high-performance, reliable, cost-effective products; for special applications, we offer optimal optoelectronic solutions and custom products. Since its establishment, the company insists on independent innovation, quality first, continuously launching innovative products widely used in industrial equipment, automotive electronics, laser ranging, healthcare, instrumentation, security monitoring, smart home, etc., with performance replacing high-end foreign brands. Enbi Technology actively deploys in IoT, intelligent society, AI, driving industry upgrades, aiming to become a high-end optoelectronic brand.
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