NL4631ZD
The NL4631ZD is part of a series of light-emitting diodes designed and developed specifically for optical encoders, with a precisely optically designed lens.
Specification Snapshot
Forward Current I_F [Maximum Ratings;Ta=25°C]
50 mA
Instantaneous Maximum Current I_FSM [Maximum Ratings;Ta=25°C;1/10 duty cycle@1kHz]
100 mA
Power Consumption P_D [Maximum Ratings;Ta=25°C]
150 mW
Operating Temperature Topr [Maximum Ratings;Ta=25°C]
-40~125 °C
Storage Temperature Tstg [Maximum Ratings;Ta=25°C]
-40~125 °C
Forward Voltage Drop V_F [Electro-Optical Characteristics;Ta=25°C;I_F=20mA]
min:2.4 V; typical:3 V; max:3.8 V
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Overview
The NL4631ZD is part of a series of light-emitting diodes designed and developed specifically for optical encoders, with a precisely optically designed lens.
Specifications
| Parameter | Value |
|---|---|
| Forward Current I_F [Maximum Ratings;Ta=25°C] | 50 mA |
| Instantaneous Maximum Current I_FSM [Maximum Ratings;Ta=25°C;1/10 duty cycle@1kHz] | 100 mA |
| Reverse Withstand Voltage V_R [Maximum Ratings;Ta=25°C] | 5 V |
| Power Consumption P_D [Maximum Ratings;Ta=25°C] | 150 mW |
| Operating Temperature Topr [Maximum Ratings;Ta=25°C] | -40~125 °C |
| Storage Temperature Tstg [Maximum Ratings;Ta=25°C] | -40~125 °C |
| Soldering Temperature Tsol [Maximum Ratings; Ta=25°C; 3mm from Package, Maximum 5 Seconds] | 260 °C |
| Thermal Resistance (Junction to Ambient) T_j [Maximum Ratings; Ta=25°C; Source Symbol Tj Retained] | 350 K/W |
| Forward Voltage Drop V_F [Electro-Optical Characteristics;Ta=25°C;I_F=20mA] | min:2.4 V; typical:3 V; max:3.8 V |
| Reverse Voltage V_R [Electro-Optical Characteristics;Ta=25°C;I_R=2μA] | min:5 V |
| Peak Wavelength λ_P [Electro-Optical Characteristics;Ta=25°C;I_F=20mA] | min:450 nm; typical:460 nm; max:470 nm |
| Half-Width Δλ [Electro-Optical Characteristics;Ta=25°C;I_F=20mA] | typical:±15 nm |
| Luminous Intensity P_O [Electro-Optical Characteristics;Ta=25°C;I_F=20mA] | min:4 mW; typical:5 mW; max:6.5 mW |
| Half-Value Angle 2θ_1/2 [Electro-Optical Characteristics;Ta=25°C;I_F=20mA;Original Half angle/2θ1/2 Retained,Not Halved] | typical:5 deg. |
| Zener Voltage (ZD) V_Z1 [Electro-Optical Characteristics;Ta=25°C;I_Z1=10mA] | min:5.5 V |
| Zener Voltage (ZD) V_Z2 [Electro-Optical Characteristics;Ta=25°C;I_Z2=10mA] | min:5.5 V |
| Quantity per Tray [Page 4 Independent Package Information; Per tray] | 60 pcs |
| Quantity per Bag [Page 4 Independent Package Information; Per bag] | 600 pcs |
| Quantity per Box [Page 4 Independent Package Information; Per box] | 4800 pcs |
Applications
Suitable for Encoders, Grating Scales, Instruments and Other Applications
Key Features
Peak Emission Wavelength460nm;Collimated Emission;High Reliability;Bidirectional Zener Diodes Improve Electrostatic Protection
Datasheet
Product Datasheet
PDF
Supplier Information
Shanghai Enbi Technology Co., Ltd., founded in 2016, focuses on optoelectronic technology R&D and production. Based on optoelectronic semiconductor discrete devices, it integrates optics, MEMS, electronics, microelectronics, semiconductor optoelectronic IC technologies, covering components, optoelectronic ICs, sensor modules, with full capability from chip design to module mass production, holding independent IP and unique testing systems. The company has an excellent management team and skilled staff, rich industry experience, strong R&D, efficient mass production and strict quality control, providing high-performance, reliable, cost-effective products; for special applications, we offer optimal optoelectronic solutions and custom products. Since its establishment, the company insists on independent innovation, quality first, continuously launching innovative products widely used in industrial equipment, automotive electronics, laser ranging, healthcare, instrumentation, security monitoring, smart home, etc., with performance replacing high-end foreign brands. Enbi Technology actively deploys in IoT, intelligent society, AI, driving industry upgrades, aiming to become a high-end optoelectronic brand.
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