NPD-ET06
NPD-ET06 Array of Six High-Sensitivity Silicon NPN Phototransistors on PCB.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Power Consumption P_C [MAXIMUM RATINGS; Ta=25°C; Phototransistor of Each Cell] | 100 mW |
| Collector-Emitter Voltage V_CEO [MAXIMUM RATINGS; Ta=25°C; Phototransistor of Each Cell] | 30 V |
| Emitter-Collector Voltage V_ECO [MAXIMUM RATINGS; Ta=25°C; Phototransistor of Each Cell] | 6 V |
| Collector Current I_C [MAXIMUM RATINGS; Ta=25°C; Phototransistor of Each Cell] | 40 mA |
| Operating Temperature Topr. [MAXIMUM RATINGS; Ta=25°C; Phototransistor of Each Cell] | -20~+100 °C |
| Storage Temperature Tstg. [MAXIMUM RATINGS; Ta=25°C; Phototransistor of Each Cell] | -30~+100 °C |
| Soldering Temperature Tsol. [MAXIMUM RATINGS; Ta=25°C; Phototransistor in Each Cell; Maximum 5 Seconds at Solder Pads; Source Row Marker *1 and Specific Soldering Instructions *2] | 260 °C |
| Collector-Emitter Saturation Voltage V_CE(sat) [Electro-optical characteristics；Ta=25°C；I_C=0.5mA] | max:0.3 V |
| Photocurrent I_L [Electro-optical characteristics; Ta=25°C; E_v=1000Lux; V_CE=5V; CIE Standard A Light Source, 2856K Tungsten Lamp] | typical:2 mA |
| Dark Current I_CEO [Electro-optical characteristics；Ta=25°C；V_CEO=10V] | typical:1 nA; max:100 nA |
| Spectral Responsivity λ [Electro-optical characteristics；Ta=25°C] | min:500 nm; max:1050 nm |
| Peak Photosensitivity Wavelength λ_p [Electro-optical characteristics；Ta=25°C] | typical:880 nm |
| Rise Time t_r [Electro-optical characteristics；Ta=25°C；V_CC=10V；R_L=100Ω；I_C=5mA] | typical:3.2 μs |
| Fall Time t_f [Electro-optical characteristics；Ta=25°C；V_CC=10V；R_L=100Ω；I_C=5mA] | typical:4.8 μs |
| Baking Conditions [Independent Note on Page 4; Before Reflow Soldering] | 12 Hours; 110±3°C; RH<5% |
| Reflow-Soldering Time Limit after Baking [Independent Note on Page 4; Complete Reflow Soldering within 48H after Baking] | 48 小时 |
Applications
Key Features
Datasheet
Supplier Information
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