NPD6311
NPD6311 Array of Six High-Sensitivity Phototransistors on PCB.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Emitter-Collector Voltage BV_ECO [MAXIMUM RATINGS; Ta=25°C; Phototransistor of Each Cell] | 5 V |
| Collector-Emitter Voltage BV_CEO [MAXIMUM RATINGS; Ta=25°C; Phototransistor of Each Cell] | 30 V |
| Operating Temperature Topr. [MAXIMUM RATINGS; Ta=25°C; Phototransistor of Each Cell] | -20~+70 °C |
| Storage Temperature Tstg. [MAXIMUM RATINGS; Ta=25°C; Phototransistor of Each Cell] | -30~+80 °C |
| Soldering Temperature Tsol. [MAXIMUM RATINGS; Ta=25°C; Phototransistor in Each Cell; Maximum 5 Seconds at Solder Pads] | 260 °C |
| Collector-Emitter Breakdown Voltage BV_CEO [Electro-optical characteristics;Ta=25°C;Phototransistor in Each Cell;I_CEO=500μA] | min:30 V |
| Emitter-Collector Breakdown Voltage BV_ECO [Electro-optical characteristics;Ta=25°C;Phototransistor in Each Cell;I_ECO=100μA] | min:5 V |
| Photocurrent I_CEL [Electro-optical Characteristics;Ta=25°C;Phototransistor in Each Cell;V_CE=5V;E_v=1000Lux;CIE Standard Illuminant A,2856K(Chinese Says Halogen Lamp/English Says Tungsten Lamp,Both Retained)] | typical:2 mA |
| Dark Current I_CEO [Electro-optical characteristics;Ta=25°C;Phototransistor in Each Cell;V_CE=5V] | max:1 μA |
| Saturation Voltage Drop V_CE(Sat) [Electro-optical characteristics;Ta=25°C;Phototransistor in Each Cell;I_CEL=5mA] | typical:0.3 V |
| Spectral Responsivity λ [Electro-optical characteristics; Ta=25°C; Phototransistor in Each Cell] | min:400 nm; max:1000 nm |
| Peak Photosensitivity Wavelength λ_p [Electro-optical characteristics; Ta=25°C; Phototransistor in Each Cell] | typical:850 nm |
| Rise Time t_r [Electro-optical characteristics; Ta=25°C; Phototransistor in Each Cell; V_CC=5V; R_L=47Ω; I_CEL=5mA] | typical:3 μs |
| Fall Time t_f [Electro-optical characteristics; Ta=25°C; Phototransistor in Each Cell; V_CC=5V; R_L=47Ω; I_CEL=5mA] | typical:4 μs |
Applications
Key Features
Datasheet
Supplier Information
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